InMgTe2

InMgTe2 is a thermodynamically stable semiconducting material investigated for its potential role in advanced phase-change memory technologies.

Overview

About InMgTe2

InMgTe2 is a semiconducting compound that occupies a stable position on the convex hull, indicating robust thermodynamic favorability. As a member of the phase-change memory material class, it possesses the structural characteristics necessary for reversible state transitions, which are essential for high-speed, non-volatile data storage technologies. Its unique elemental composition allows for distinct electronic behavior compared to more traditional chalcogenide alloys. The material is currently a subject of interest for researchers seeking to optimize the performance and longevity of next-generation memory devices. Its stability makes it a reliable candidate for further experimental investigation into its switching kinetics and structural dynamics.

At a glance

Key Properties

Cross-validated computational properties for InMgTe2, aggregated across 3 databases.

Band Gap

1.04–1.48 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

7
3 databases, 4 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for InMgTe2, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
I-4 (No. 82)tetragonal1.480.0000-3.5364.52
I-42m (No. 121)tetragonal1.040.0048-3.5314.54
R-3m (No. 166)
P4/mmm (No. 123)
5.21
5.49
5.96
Uses

Applications

Where InMgTe2 is used.

Phase-change memory devicesNon-volatile data storageNeuromorphic computing hardware
Reference

Frequently Asked Questions

Common questions about InMgTe2, answered from cross-validated data.

What is InMgTe2?

InMgTe2 is a thermodynamically stable semiconducting material investigated for its potential role in advanced phase-change memory technologies.

More questions
What is InMgTe2 used for?
InMgTe2 is used in phase-change memory devices, non-volatile data storage, and neuromorphic computing hardware.
What is the band gap of InMgTe2?
InMgTe2 has a DFT-computed band gap of 1.04–1.48 eV across 7 reported structures.
Is InMgTe2 a metal, semiconductor, or insulator?
With a band gap up to 1.48 eV it is a semiconductor.
Is InMgTe2 thermodynamically stable?
Yes — InMgTe2 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of InMgTe2?
The lowest-energy reported polymorph of InMgTe2 is tetragonal symmetry, space group I-4 (No. 82).
What is the density of InMgTe2?
The computed density of the ground-state structure of InMgTe2 is 4.52 g/cm³.
How many polymorphs of InMgTe2 are known?
7 structures of InMgTe2 are reported across 3 databases, spanning 4 distinct space groups.
What elements does InMgTe2 contain?
InMgTe2 contains In, Mg, and Te (3 elements).
Where does the data for InMgTe2 come from?
InMgTe2 data is cross-referenced from materials_project, nomad, omat24.
Comparison

How It Compares

Within the phase-change memory materials class.

Within the broad family of phase-change materials, InMgTe2 distinguishes itself through its specific stoichiometry, offering a different structural landscape than the widely utilized Ge2Sb2Te5 or the binary Sb2Te3. While many class members rely on complex germanium-antimony-tellurium matrices, InMgTe2 provides a unique alternative that leverages the properties of indium and magnesium to potentially tune the switching characteristics and thermal stability of the memory cell.

Explore

Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • nomad — Data from NOMAD. Cite: Draxl & Scheffler, J. Phys. Mater. 2, 036001 (2019).
  • omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).

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