InAgTe2
InAgTe2 is a thermodynamically stable, semimetallic ternary chalcogenide used in the development of advanced phase-change memory technologies.
About InAgTe2
InAgTe2 is a complex ternary chalcogenide that functions as a robust phase-change memory material. Its position on the convex hull confirms its thermodynamic stability, making it a reliable candidate for structural investigations in electronic device architectures.
As a near-zero-gap semimetallic compound, it exhibits unique electronic properties that are critical for switching applications. With extensive structural data available, it serves as a foundational material for understanding phase transitions in high-performance computing and non-volatile memory technologies.
Key Properties
Cross-validated computational properties for InAgTe2, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for InAgTe2, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| I-42d (No. 122) | tetragonal | 0.06 | 0.0000 | -24.068 | 5.83 |
| P-4m2 (No. 115) | tetragonal | 0.00 | 0.0102 | -24.058 | 5.83 |
| R-3m (No. 166) | trigonal | 0.00 | 0.1173 | -23.951 | 7.13 |
| P4/mmm (No. 123) | tetragonal | 0.00 | 0.1267 | -23.942 | 7.14 |
| P3m1 (No. 156) | trigonal | 0.00 | 0.2757 | -23.793 | 5.46 |
| P-4m2 (No. 115) | Tetragonal | — | — | — | 5.89 |
| I-42d (No. 122) | Tetragonal | — | — | — | 5.88 |
| I-42d (No. 122) | Tetragonal | — | — | — | 5.83 |
| I-42d (No. 122) | Tetragonal | — | — | — | 5.65 |
| P-4m2 (No. 115) | Tetragonal | — | — | — | 5.84 |
| P4/mmm (No. 123) | — | — | — | — | — |
| P-4m2 (No. 115) | Tetragonal | — | — | — | 5.63 |
Applications
Where InAgTe2 is used.
Frequently Asked Questions
Common questions about InAgTe2, answered from cross-validated data.
What is InAgTe2?
InAgTe2 is a thermodynamically stable, semimetallic ternary chalcogenide used in the development of advanced phase-change memory technologies.
What is InAgTe2 used for?
What is the band gap of InAgTe2?
Is InAgTe2 a metal, semiconductor, or insulator?
Is InAgTe2 thermodynamically stable?
What is the crystal structure of InAgTe2?
What is the density of InAgTe2?
How many polymorphs of InAgTe2 are known?
What elements does InAgTe2 contain?
Where does the data for InAgTe2 come from?
How It Compares
Within the phase-change memory materials class.
Within the landscape of phase-change materials, InAgTe2 occupies a distinct niche compared to classic binary compounds like GeTe or Sb2Te3. While many of its siblings rely on traditional stoichiometric ratios to drive switching behavior, InAgTe2 leverages its ternary composition to achieve stable phase transitions, providing a different structural pathway for memory operations than the widely utilized Ge2Sb2Te5.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- mpaloe — Data from mpaloe.
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
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