In5AgTe8

In5AgTe8 is a stable semiconducting chalcogenide used in the development of phase-change memory devices.

Crystal structure of In5AgTe8 (monoclinic, C2 (No. 5))
Ground-state structure · Materials Project
Overview

About In5AgTe8

In5AgTe8 is a thermodynamically stable semiconducting compound within the chalcogenide family. Its ability to exist in multiple structural configurations makes it a compelling candidate for advanced memory applications where rapid, reversible state transitions are required.

As a member of the phase-change material class, it leverages its electronic properties to facilitate data storage. Its stability on the convex hull suggests a robust material system that maintains structural integrity during the cyclic switching processes essential for modern computing hardware.

At a glance

Key Properties

Cross-validated computational properties for In5AgTe8, aggregated across 3 databases.

Band Gap

0.18–0.29 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

9
3 databases, 2 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for In5AgTe8, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
C2 (No. 5)monoclinic0.180.0000-24.5505.60
P-42m (No. 111)tetragonal0.290.0041-24.5465.60
P-42m (No. 111)
P-42m (No. 111)Tetragonal5.50
P-42m (No. 111)Tetragonal5.65
C2 (No. 5)Monoclinic5.59
P-42m (No. 111)Tetragonal5.71
C2 (No. 5)Monoclinic5.37
C2 (No. 5)Monoclinic5.54
Uses

Applications

Where In5AgTe8 is used.

Phase-change memoryNon-volatile data storageNeuromorphic computing
Reference

Frequently Asked Questions

Common questions about In5AgTe8, answered from cross-validated data.

What is In5AgTe8?

In5AgTe8 is a stable semiconducting chalcogenide used in the development of phase-change memory devices.

More questions
What is In5AgTe8 used for?
In5AgTe8 is used in phase-change memory, non-volatile data storage, and neuromorphic computing.
What is the band gap of In5AgTe8?
In5AgTe8 has a DFT-computed band gap of 0.18–0.29 eV across 9 reported structures.
Is In5AgTe8 a metal, semiconductor, or insulator?
With a band gap up to 0.29 eV it is a semiconductor.
Is In5AgTe8 thermodynamically stable?
Yes — In5AgTe8 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of In5AgTe8?
The lowest-energy reported polymorph of In5AgTe8 is monoclinic symmetry, space group C2 (No. 5).
What is the density of In5AgTe8?
The computed density of the ground-state structure of In5AgTe8 is 5.60 g/cm³.
How many polymorphs of In5AgTe8 are known?
9 structures of In5AgTe8 are reported across 3 databases, spanning 2 distinct space groups.
What elements does In5AgTe8 contain?
In5AgTe8 contains Ag, In, and Te (3 elements).
Where does the data for In5AgTe8 come from?
In5AgTe8 data is cross-referenced from materials_project, jarvis, mpaloe.
Comparison

How It Compares

Within the phase-change memory materials class.

In5AgTe8 occupies a distinct niche compared to classic phase-change materials like GeTe or Ge2Sb2Te5. While those materials are widely recognized for their rapid switching speeds, In5AgTe8 offers a different compositional balance involving indium and silver, which alters the kinetic and thermodynamic landscape of the phase transition compared to simpler binary systems like Ag2Te or AgTe.

Explore

Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
  • mpaloe — Data from mpaloe.

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