In4Te10

In4Te10 has a DFT band gap of 0.89 eV across 7 reported structures in 3 space groups. Cross-validated across 4 computational databases.

At a glance

Key Properties

Cross-validated computational properties for In4Te10, aggregated across 4 databases.

Band Gap

0.89 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

7
4 databases, 3 space groups
Reference

Frequently Asked Questions

Common questions about In4Te10, answered from cross-validated data.

What is the band gap of In4Te10?

In4Te10 has a DFT-computed band gap of 0.89 eV across 7 reported structures.

More questions
Is In4Te10 a metal, semiconductor, or insulator?
With a band gap up to 0.89 eV it is a semiconductor.
Is In4Te10 thermodynamically stable?
Yes — In4Te10 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of In4Te10 are known?
7 structures of In4Te10 are reported across 4 databases, spanning 3 distinct space groups.
What elements does In4Te10 contain?
In4Te10 contains In and Te (2 elements).
Where does the data for In4Te10 come from?
In4Te10 data is cross-referenced from latticegraph.
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Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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