In4Te10
In4Te10 has a DFT band gap of 0.89 eV across 7 reported structures in 3 space groups; its lowest-energy polymorph is monoclinic (C2/c (No. 15)). Cross-validated across 4 computational databases.
At a glance
Key Properties
Cross-validated computational properties for In4Te10, aggregated across 4 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
0.89 eV
Range across DFT structures
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
0.000 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
On hull (stable)
2 DFT sources
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
7
4 databases, 3 space groups
Crystallography
Reported Structures
Lowest-energy structures reported for In4Te10, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| C2/c (No. 15) | monoclinic | 0.85 | 0.0000 | -24.934 | 5.55 |
| Cc (No. 9) | monoclinic | 0.89 | 0.0012 | -24.932 | 5.56 |
| — | — | — | — | — | 5.44 |
| No. 0 | unknown | — | — | — | 0.23 |
| Cc (No. 9) | — | — | — | — | — |
| Cc (No. 9) | — | — | — | — | — |
| Cc (No. 9) | — | — | — | — | — |
Reference
Frequently Asked Questions
Common questions about In4Te10, answered from cross-validated data.
What is the band gap of In4Te10?
In4Te10 has a DFT-computed band gap of 0.89 eV across 7 reported structures.
More questions
Is In4Te10 a metal, semiconductor, or insulator?
With a band gap up to 0.89 eV it is a semiconductor.
Is In4Te10 thermodynamically stable?
Yes — In4Te10 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of In4Te10?
The lowest-energy reported polymorph of In4Te10 is monoclinic symmetry, space group C2/c (No. 15).
What is the density of In4Te10?
The computed density of the ground-state structure of In4Te10 is 5.55 g/cm³.
How many polymorphs of In4Te10 are known?
7 structures of In4Te10 are reported across 4 databases, spanning 3 distinct space groups.
What elements does In4Te10 contain?
In4Te10 contains In and Te (2 elements).
Where does the data for In4Te10 come from?
In4Te10 data is cross-referenced from materials_project, omat24, cod, aflow.
Explore
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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