In4O5
In4O5 has a DFT band gap of 0.21 eV across 1 reported structure in 0 space groups. Cross-validated across 1 computational databases.
Key Properties
Cross-validated computational properties for In4O5, aggregated across 1 database.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of In4O5. Tight agreement means computed properties can be trusted without re-running calculations.
Only 1 independent DFT source (oqmd) reports a hull energy for In4O5, so cross-source agreement can't be assessed yet.
Reported Structures
Lowest-energy structures reported for In4O5, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| — | — | 0.21 | 0.2609 | -1.454 | — |
Frequently Asked Questions
Common questions about In4O5, answered from cross-validated data.
What is the band gap of In4O5?
In4O5 has a DFT-computed band gap of 0.21 eV. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is In4O5 a metal, semiconductor, or insulator?
Is In4O5 thermodynamically stable?
What elements does In4O5 contain?
Where does the data for In4O5 come from?
Related Compounds
Other Wide-Bandgap Oxide Semiconductors in the database.
Data sources & attribution
- oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
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