In1Te2Zn1

In1Te2Zn1 is a stable, semiconducting phase-change material used in the development of advanced non-volatile memory technologies.

Overview

About In1Te2Zn1

In1Te2Zn1 is a semiconducting compound within the phase-change memory material family. Its position on the convex hull indicates high thermodynamic stability, making it a robust candidate for applications requiring structural reliability during repeated transitions. As a member of the indium-tellurium-zinc system, this material is designed to leverage reversible phase transitions between amorphous and crystalline states. This capability is essential for high-speed, non-volatile data storage technologies that rely on rapid resistance switching.

At a glance

Key Properties

Cross-validated computational properties for In1Te2Zn1, aggregated across 2 databases.

Band Gap

0.83 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

27
2 databases, 18 space groups
Uses

Applications

Where In1Te2Zn1 is used.

Phase-change memory devicesNon-volatile data storageNeuromorphic computing hardware
Reference

Frequently Asked Questions

Common questions about In1Te2Zn1, answered from cross-validated data.

What is In1Te2Zn1?

In1Te2Zn1 is a stable, semiconducting phase-change material used in the development of advanced non-volatile memory technologies.

More questions
What is In1Te2Zn1 used for?
In1Te2Zn1 is used in phase-change memory devices, non-volatile data storage, and neuromorphic computing hardware.
What is the band gap of In1Te2Zn1?
In1Te2Zn1 has a DFT-computed band gap of 0.83 eV across 27 reported structures.
Is In1Te2Zn1 a metal, semiconductor, or insulator?
With a band gap up to 0.83 eV it is a semiconductor.
Is In1Te2Zn1 thermodynamically stable?
Yes — In1Te2Zn1 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of In1Te2Zn1 are known?
27 structures of In1Te2Zn1 are reported across 2 databases, spanning 18 distinct space groups.
What elements does In1Te2Zn1 contain?
In1Te2Zn1 contains In, Te, and Zn (3 elements).
Where does the data for In1Te2Zn1 come from?
In1Te2Zn1 data is cross-referenced from latticegraph.
Comparison

How It Compares

Within the phase-change memory materials class.

Compared to widely utilized phase-change materials like GeTe or Ge2Sb2Te5, In1Te2Zn1 offers a distinct elemental composition that influences its switching kinetics and thermal stability. While siblings like Sb2Te3 are often studied for their high-speed crystallization, In1Te2Zn1 provides a unique structural profile that may offer different performance trade-offs in memory device architecture.

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Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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