In1Te2Zn1
This compound is a ternary semiconductor material composed of indium, tellurium, and zinc. It is primarily studied for its potential utility in electronic and optoelectronic devices due to its specific structural and electronic properties.
Key Properties
Cross-validated computational properties for In1Te2Zn1, aggregated across 2 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for In1Te2Zn1, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| I-4 (No. 82) | tetragonal | 0.83 | 0.0000 | -3.379 | 5.25 |
| F-43m (No. 216) | — | — | — | — | — |
| P2/m (No. 10) | — | — | — | — | — |
| Imm2 (No. 44) | — | — | — | — | — |
| Fm-3m (No. 225) | — | — | — | — | — |
| Cmm2 (No. 35) | — | — | — | — | — |
| Cmmm (No. 65) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
| Immm (No. 71) | — | — | — | — | — |
| P4mm (No. 99) | — | — | — | — | — |
| Cmmm (No. 65) | — | — | — | — | — |
| P2/m (No. 10) | — | — | — | — | — |
Applications
Where In1Te2Zn1 is used.
Frequently Asked Questions
Common questions about In1Te2Zn1, answered from cross-validated data.
What is In1Te2Zn1?
This compound is a ternary semiconductor material composed of indium, tellurium, and zinc. It is primarily studied for its potential utility in electronic and optoelectronic devices due to its specific structural and electronic properties.
What is In1Te2Zn1 used for?
What is the band gap of In1Te2Zn1?
Is In1Te2Zn1 a metal, semiconductor, or insulator?
Is In1Te2Zn1 thermodynamically stable?
What is the crystal structure of In1Te2Zn1?
What is the density of In1Te2Zn1?
How many polymorphs of In1Te2Zn1 are known?
What elements does In1Te2Zn1 contain?
Where does the data for In1Te2Zn1 come from?
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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