I4In4Te4
I4In4Te4 is a stable, semiconducting inorganic compound used in the study and development of phase-change memory technologies.
About I4In4Te4
I4In4Te4 is a semiconducting compound belonging to the class of phase-change memory materials. Its position on the convex hull indicates that it is a thermodynamically stable phase, making it a reliable candidate for research into reversible structural transformations.
This material is of significant interest for its potential in non-volatile data storage applications. By leveraging its electronic characteristics, researchers investigate how this compound can switch between distinct structural states to represent binary data in high-performance memory devices.
Key Properties
Cross-validated computational properties for I4In4Te4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for I4In4Te4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P21/c (No. 14) | monoclinic | 1.71 | 0.0000 | -3.171 | 4.89 |
| — | — | — | — | — | 4.38 |
| P21/c (No. 14) | — | — | — | — | — |
| — | — | — | — | — | 4.51 |
| — | — | — | — | — | 3.65 |
| — | — | — | — | — | 3.77 |
| — | — | — | — | — | 4.51 |
| — | — | — | — | — | 4.44 |
Applications
Where I4In4Te4 is used.
Frequently Asked Questions
Common questions about I4In4Te4, answered from cross-validated data.
What is I4In4Te4?
I4In4Te4 is a stable, semiconducting inorganic compound used in the study and development of phase-change memory technologies.
What is I4In4Te4 used for?
What is the band gap of I4In4Te4?
Is I4In4Te4 a metal, semiconductor, or insulator?
Is I4In4Te4 thermodynamically stable?
What is the crystal structure of I4In4Te4?
What is the density of I4In4Te4?
How many polymorphs of I4In4Te4 are known?
What elements does I4In4Te4 contain?
Where does the data for I4In4Te4 come from?
How It Compares
Within the phase-change memory materials class.
Within the diverse family of phase-change materials, I4In4Te4 occupies a distinct niche compared to well-known standards like Ge2Sb2Te5 or Sb2Te3. While many members of this class rely on complex chalcogenide alloys to achieve rapid switching, I4In4Te4 offers a unique structural profile that provides a different perspective on stability and phase transition kinetics in semiconducting systems.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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