Hf3Ni3Bi4

Hf3Ni3Bi4 has a DFT band gap of 0.75 eV across 1 reported structure in 0 space groups. Cross-validated across 1 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Hf3Ni3Bi4, aggregated across 1 database.

Band Gap

0.75 eV
Range across DFT structures · ground state: narrow gap

Energy Above Hull

0.070 eV/atom
Best (lowest) across sources

Stability

Metastable
1 DFT source

Structures

1
1 database, 0 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of Hf3Ni3Bi4. Tight agreement means computed properties can be trusted without re-running calculations.

Only 1 independent DFT source (oqmd) reports a hull energy for Hf3Ni3Bi4, so cross-source agreement can't be assessed yet.

Crystallography

Reported Structures

Lowest-energy structures reported for Hf3Ni3Bi4, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
——0.750.0698-0.242—
Reference

Frequently Asked Questions

Common questions about Hf3Ni3Bi4, answered from cross-validated data.

What is the band gap of Hf3Ni3Bi4?

Hf3Ni3Bi4 has a DFT-computed band gap of 0.75 eV. Standard DFT underestimates band gaps, so the measured gap is typically larger.

More questions
Is Hf3Ni3Bi4 a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 0.75 eV (a semiconductor). Measured gaps are typically larger.
Is Hf3Ni3Bi4 thermodynamically stable?
Hf3Ni3Bi4 has a lowest energy above hull of 0.070 eV/atom (metastable).
What elements does Hf3Ni3Bi4 contain?
Hf3Ni3Bi4 contains Bi, Hf, and Ni (3 elements).
Where does the data for Hf3Ni3Bi4 come from?
Hf3Ni3Bi4 data is cross-referenced from oqmd.
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Related Compounds

Other Half-Heusler Thermoelectrics in the database.

Data sources & attribution
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)

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