Ni1Sn1Zr1

Ni1Sn1Zr1 has a DFT band gap of 0.50 eV across 28 reported structures in 5 space groups. Cross-validated across 3 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Ni1Sn1Zr1, aggregated across 3 databases.

Band Gap

0.50 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

28
3 databases, 5 space groups
Reference

Frequently Asked Questions

Common questions about Ni1Sn1Zr1, answered from cross-validated data.

What is the band gap of Ni1Sn1Zr1?

Ni1Sn1Zr1 has a DFT-computed band gap of 0.50 eV across 28 reported structures.

More questions
Is Ni1Sn1Zr1 a metal, semiconductor, or insulator?
With a band gap up to 0.50 eV it is a semiconductor.
Is Ni1Sn1Zr1 thermodynamically stable?
Yes — Ni1Sn1Zr1 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of Ni1Sn1Zr1 are known?
28 structures of Ni1Sn1Zr1 are reported across 3 databases, spanning 5 distinct space groups.
What elements does Ni1Sn1Zr1 contain?
Ni1Sn1Zr1 contains Ni, Sn, and Zr (3 elements).
Where does the data for Ni1Sn1Zr1 come from?
Ni1Sn1Zr1 data is cross-referenced from latticegraph.
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Related Compounds

Other Half-Heusler Thermoelectrics in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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