GeTe7As4
GeTe7As4 is a metastable semiconducting chalcogenide compound utilized in the development of phase-change memory technologies.
About GeTe7As4
GeTe7As4 is a complex chalcogenide belonging to the class of phase-change memory materials. As a semiconducting compound, it exhibits the characteristic ability to transition between amorphous and crystalline states, a fundamental mechanism for non-volatile data storage technology. Its metastable nature makes it a subject of significant interest for researchers aiming to tune switching speeds and thermal stability in electronic devices.
This material is primarily investigated for its potential to improve the performance of next-generation memory architectures. By leveraging its unique electronic properties, engineers seek to develop more efficient and durable memory cells that can withstand repeated phase transitions without degradation.
Key Properties
Cross-validated computational properties for GeTe7As4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of GeTe7As4. Tight agreement means computed properties can be trusted without re-running calculations.
Agreement ScoreA normalized confidence score summarizing how closely independent DFT databases agree. Higher scores mean tighter cross-source agreement.
Hull SpreadDifference between the highest and lowest energy-above-hull values reported by comparable sources. Smaller spread means less thermodynamic disagreement.
Sources ComparedNumber and names of computational sources with comparable entries for this formula.
Space Group ConsensusWhether independent sources predict the same crystal symmetry for the lowest-energy structure.
Reported Structures
Lowest-energy structures reported for GeTe7As4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P-3m1 (No. 164) | trigonal | 0.35 | 0.0067 | -0.021 | — |
| — | — | 0.53 | 0.0098 | -0.018 | — |
| P-3m1 (No. 164) | trigonal | 0.38 | 0.0464 | -20.855 | 6.07 |
| P-3m1 (No. 164) | trigonal | — | — | — | 6.23 |
| P-3m1 (No. 164) | trigonal | — | — | — | 6.16 |
| P-3m1 (No. 164) | trigonal | — | — | — | 6.07 |
Applications
Where GeTe7As4 is used.
Frequently Asked Questions
Common questions about GeTe7As4, answered from cross-validated data.
What is GeTe7As4?
GeTe7As4 is a metastable semiconducting chalcogenide compound utilized in the development of phase-change memory technologies.
What is GeTe7As4 used for?
What is the band gap of GeTe7As4?
Is GeTe7As4 a metal, semiconductor, or insulator?
Is GeTe7As4 thermodynamically stable?
What is the crystal structure of GeTe7As4?
How many polymorphs of GeTe7As4 are known?
What elements does GeTe7As4 contain?
Where does the data for GeTe7As4 come from?
How It Compares
Within the phase-change memory materials class.
Within the diverse family of phase-change materials, GeTe7As4 represents a more complex, multi-component stoichiometry compared to simpler binary systems like GeTe or AgTe. While GeTe remains the foundational benchmark for the class, the addition of arsenic and the higher tellurium content in GeTe7As4 allow for different crystallization kinetics and thermal profiles, positioning it as a specialized candidate for applications requiring distinct switching characteristics compared to standard alloys like Ge2Sb2Te5.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
- oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
- materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
- mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.
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