GeTe7As4
This material is a complex chalcogenide semiconductor composed of germanium, tellurium, and arsenic. It is primarily studied for its phase-change properties, which allow it to switch between different structural states for advanced data storage and electronic switching applications.
Key Properties
Cross-validated computational properties for GeTe7As4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for GeTe7As4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P-3m1 (No. 164) | trigonal | 0.41 | 0.0940 | -3.788 | 6.07 |
| P-3m1 (No. 164) | — | — | — | — | — |
| P-3m1 (No. 164) | Trigonal | — | — | — | 6.23 |
| P-3m1 (No. 164) | Trigonal | — | — | — | 6.07 |
| P-3m1 (No. 164) | Trigonal | — | — | — | 6.16 |
Applications
Where GeTe7As4 is used.
Frequently Asked Questions
Common questions about GeTe7As4, answered from cross-validated data.
What is GeTe7As4?
This material is a complex chalcogenide semiconductor composed of germanium, tellurium, and arsenic. It is primarily studied for its phase-change properties, which allow it to switch between different structural states for advanced data storage and electronic switching applications.
What is GeTe7As4 used for?
What is the band gap of GeTe7As4?
Is GeTe7As4 a metal, semiconductor, or insulator?
Is GeTe7As4 thermodynamically stable?
What is the crystal structure of GeTe7As4?
What is the density of GeTe7As4?
How many polymorphs of GeTe7As4 are known?
What elements does GeTe7As4 contain?
Where does the data for GeTe7As4 come from?
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
- mpaloe — Data from mpaloe.
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