GeSbTe
GeSbTe is a semimetallic phase-change material engineered for high-speed, reversible data storage applications.
About GeSbTe
GeSbTe is a semimetallic phase-change material that occupies a critical position in the development of advanced memory technologies. Its electronic character and proximity to the thermodynamic hull suggest it is a highly viable candidate for rapid, reversible structural transitions between amorphous and crystalline states.
This compound is primarily utilized in the research and development of non-volatile memory devices. By leveraging its ability to switch states efficiently, it serves as a foundational material for high-speed data storage and neuromorphic computing architectures that require stable, long-lasting performance.
Key Properties
Cross-validated computational properties for GeSbTe, aggregated across 2 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of GeSbTe. Tight agreement means computed properties can be trusted without re-running calculations.
Agreement ScoreA normalized confidence score summarizing how closely independent DFT databases agree. Higher scores mean tighter cross-source agreement.
Hull SpreadDifference between the highest and lowest energy-above-hull values reported by comparable sources. Smaller spread means less thermodynamic disagreement.
Sources ComparedNumber and names of computational sources with comparable entries for this formula.
Space Group ConsensusWhether independent sources predict the same crystal symmetry for the lowest-energy structure.
Reported Structures
Lowest-energy structures reported for GeSbTe, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| — | — | 0.00 | 0.1366 | 0.065 | — |
| — | — | 0.00 | 0.1388 | 0.067 | — |
| — | — | 0.00 | 0.2374 | 0.166 | — |
| P4mm (No. 99) | tetragonal | 0.00 | 0.2755 | 0.200 | — |
| — | — | 0.00 | 0.3604 | 0.289 | — |
| — | — | 0.00 | 0.4423 | 0.371 | — |
| — | — | 0.00 | 0.5703 | 0.499 | — |
| Pm (No. 6) | monoclinic | 0.00 | 1.1424 | 1.067 | — |
Synthesis Routes
Literature-extracted synthesis procedures targeting GeSbTe.
Applications
Where GeSbTe is used.
Frequently Asked Questions
Common questions about GeSbTe, answered from cross-validated data.
What is GeSbTe?
GeSbTe is a semimetallic phase-change material engineered for high-speed, reversible data storage applications.
What is GeSbTe used for?
What is the band gap of GeSbTe?
Is GeSbTe a metal, semiconductor, or insulator?
Is GeSbTe thermodynamically stable?
What is the crystal structure of GeSbTe?
How many polymorphs of GeSbTe are known?
How is GeSbTe synthesized?
What elements does GeSbTe contain?
Where does the data for GeSbTe come from?
How It Compares
Within the phase-change memory materials class.
Within the family of phase-change materials, GeSbTe serves as a versatile bridge between simpler binary compounds like GeTe and more complex, widely utilized alloys such as Ge2Sb2Te5. While GeTe provides a baseline for rapid switching, GeSbTe offers a distinct compositional balance that allows for fine-tuning of thermal and electrical properties, making it an essential subject for optimizing the endurance and power efficiency of memory cells.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
- jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
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