GeSbTe

GeSbTe is a semimetallic phase-change material engineered for high-speed, reversible data storage applications.

Overview

About GeSbTe

GeSbTe is a semimetallic phase-change material that occupies a critical position in the development of advanced memory technologies. Its electronic character and proximity to the thermodynamic hull suggest it is a highly viable candidate for rapid, reversible structural transitions between amorphous and crystalline states.

This compound is primarily utilized in the research and development of non-volatile memory devices. By leveraging its ability to switch states efficiently, it serves as a foundational material for high-speed data storage and neuromorphic computing architectures that require stable, long-lasting performance.

At a glance

Key Properties

Cross-validated computational properties for GeSbTe, aggregated across 3 databases.

Band Gap

0.10 eV
Range across DFT structures

Energy Above Hull

0.020 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
1 DFT source

Structures

6
3 databases, 5 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of GeSbTe. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

1.00 / 1.00
Trust tier: medium

Hull Spread

0.000 eV
EAH spread across sources

Sources Compared

2
jarvis, materials_project

Space Group Consensus

All match
Synthesis

Synthesis Routes

Literature-extracted synthesis procedures targeting GeSbTe.

Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Uses

Applications

Where GeSbTe is used.

Non-volatile memory devicesOptical data storageNeuromorphic computing hardware
Reference

Frequently Asked Questions

Common questions about GeSbTe, answered from cross-validated data.

What is GeSbTe?

GeSbTe is a semimetallic phase-change material engineered for high-speed, reversible data storage applications.

More questions
What is GeSbTe used for?
GeSbTe is used in non-volatile memory devices, optical data storage, and neuromorphic computing hardware.
What is the band gap of GeSbTe?
GeSbTe has a DFT-computed band gap of 0.10 eV across 6 reported structures.
Is GeSbTe a metal, semiconductor, or insulator?
With a near-zero band gap it behaves as a (semi)metal.
Is GeSbTe thermodynamically stable?
GeSbTe has a lowest energy above hull of 0.020 eV/atom (near hull (likely stable)).
How many polymorphs of GeSbTe are known?
6 structures of GeSbTe are reported across 3 databases, spanning 5 distinct space groups.
How is GeSbTe synthesized?
Literature-reported routes for GeSbTe include solid state (2 procedures documented).
What elements does GeSbTe contain?
GeSbTe contains Ge, Sb, and Te (3 elements).
Where does the data for GeSbTe come from?
GeSbTe data is cross-referenced from latticegraph.
Comparison

How It Compares

Within the phase-change memory materials class.

Within the family of phase-change materials, GeSbTe serves as a versatile bridge between simpler binary compounds like GeTe and more complex, widely utilized alloys such as Ge2Sb2Te5. While GeTe provides a baseline for rapid switching, GeSbTe offers a distinct compositional balance that allows for fine-tuning of thermal and electrical properties, making it an essential subject for optimizing the endurance and power efficiency of memory cells.

Explore

Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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