GePbTe2
GePbTe2 is a semiconducting, metastable ternary chalcogenide used in the research and development of phase-change memory storage devices.
About GePbTe2
GePbTe2 is a semiconducting ternary compound belonging to the class of phase-change memory materials. Its metastable nature allows it to undergo structural transitions, which is a fundamental requirement for high-speed switching applications in electronic devices. The material is characterized by its ability to switch between amorphous and crystalline states, making it a subject of interest for next-generation memory architectures. By leveraging the interplay between its constituent elements, this compound offers a distinct pathway for optimizing data retention and switching speed in non-volatile memory technologies. Its electronic behavior is central to its utility in devices that require rapid, reversible phase transitions.
Key Properties
Cross-validated computational properties for GePbTe2, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for GePbTe2, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P4/mmm (No. 123) | tetragonal | 0.25 | 0.0799 | -30.438 | 6.97 |
| — | — | — | — | — | 7.82 |
| — | — | — | — | — | 6.86 |
| P4/mmm (No. 123) | — | — | — | — | — |
Applications
Where GePbTe2 is used.
Frequently Asked Questions
Common questions about GePbTe2, answered from cross-validated data.
What is GePbTe2?
GePbTe2 is a semiconducting, metastable ternary chalcogenide used in the research and development of phase-change memory storage devices.
What is GePbTe2 used for?
What is the band gap of GePbTe2?
Is GePbTe2 a metal, semiconductor, or insulator?
Is GePbTe2 thermodynamically stable?
What is the crystal structure of GePbTe2?
What is the density of GePbTe2?
How many polymorphs of GePbTe2 are known?
What elements does GePbTe2 contain?
Where does the data for GePbTe2 come from?
How It Compares
Within the phase-change memory materials class.
Within the broad family of phase-change materials, GePbTe2 occupies a specialized niche compared to the industry-standard Ge2Sb2Te5. While Ge2Sb2Te5 is widely utilized for its reliable switching kinetics, GePbTe2 provides an alternative structural framework that explores the impact of lead incorporation on the stability and electronic density of states within the chalcogenide lattice.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- nomad — Data from NOMAD. Cite: Draxl & Scheffler, J. Phys. Mater. 2, 036001 (2019).
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