GeBi4Te7
This compound is a complex chalcogenide material belonging to the family of topological insulators and phase-change materials. It is primarily studied for its unique electronic properties and potential utility in advanced computing and sensing technologies.
Overview
Key Properties
Cross-validated computational properties for GeBi4Te7, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
0.57 eV
Range across DFT structures
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
0.008 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
Near hull (likely stable)
2 DFT sources
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
5
3 databases, 1 space group
Crystallography
Reported Structures
Lowest-energy structures reported for GeBi4Te7, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P-3m1 (No. 164) | trigonal | 0.57 | 0.0081 | -35.710 | 7.22 |
| P-3m1 (No. 164) | Trigonal | — | — | — | 7.19 |
| P-3m1 (No. 164) | Trigonal | — | — | — | 7.36 |
| P-3m1 (No. 164) | Trigonal | — | — | — | 7.29 |
| P-3m1 (No. 164) | — | — | — | — | — |
Uses
Applications
Where GeBi4Te7 is used.
Phase-change memory devicesTopological insulator researchThermoelectric materials developmentSpintronics
Reference
Frequently Asked Questions
Common questions about GeBi4Te7, answered from cross-validated data.
What is GeBi4Te7?
This compound is a complex chalcogenide material belonging to the family of topological insulators and phase-change materials. It is primarily studied for its unique electronic properties and potential utility in advanced computing and sensing technologies.
What is GeBi4Te7 used for?
GeBi4Te7 is used in phase-change memory devices, topological insulator research, thermoelectric materials development, and spintronics.
What is the band gap of GeBi4Te7?
GeBi4Te7 has a DFT-computed band gap of 0.57 eV across 5 reported structures.
Is GeBi4Te7 a metal, semiconductor, or insulator?
With a band gap up to 0.57 eV it is a semiconductor.
Is GeBi4Te7 thermodynamically stable?
GeBi4Te7 has a lowest energy above hull of 0.008 eV/atom (near hull (likely stable)).
What is the crystal structure of GeBi4Te7?
The lowest-energy reported polymorph of GeBi4Te7 is trigonal symmetry, space group P-3m1 (No. 164).
What is the density of GeBi4Te7?
The computed density of the ground-state structure of GeBi4Te7 is 7.22 g/cm³.
How many polymorphs of GeBi4Te7 are known?
5 structures of GeBi4Te7 are reported across 3 databases, spanning 1 distinct space group.
What elements does GeBi4Te7 contain?
GeBi4Te7 contains Bi, Ge, and Te (3 elements).
Where does the data for GeBi4Te7 come from?
GeBi4Te7 data is cross-referenced from materials_project, mpaloe, jarvis.
Explore
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- mpaloe — Data from mpaloe.
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
Analyze GeBi4Te7 in the Lattice Graph platform
Polymorph comparison, confidence scoring, supply-chain risk, and patent monitoring — across 53 integrated data sources.
Explore the Platform →