Ge4Na8Te10
Ge4Na8Te10 is a stable semiconducting telluride compound utilized in the development of advanced phase-change memory technologies.
About Ge4Na8Te10
Ge4Na8Te10 is a semiconducting compound belonging to the phase-change memory material class. Its position on the convex hull indicates high thermodynamic stability, which is a critical attribute for the reliability and longevity of data storage devices that rely on reversible phase transitions.
This material is engineered for applications where rapid switching between amorphous and crystalline states is required. By leveraging its specific electronic character, researchers explore its potential to enhance the performance and energy efficiency of non-volatile memory architectures.
Key Properties
Cross-validated computational properties for Ge4Na8Te10, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ge4Na8Te10, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P-1 (No. 2) | triclinic | 1.00 | 0.0000 | -16.092 | 4.22 |
| P21/c (No. 14) | monoclinic | 1.34 | 0.0036 | -16.088 | 4.07 |
| P-1 (No. 2) | — | — | — | — | — |
| P21/c (No. 14) | monoclinic | — | — | — | 1.06 |
Applications
Where Ge4Na8Te10 is used.
Frequently Asked Questions
Common questions about Ge4Na8Te10, answered from cross-validated data.
What is Ge4Na8Te10?
Ge4Na8Te10 is a stable semiconducting telluride compound utilized in the development of advanced phase-change memory technologies.
What is Ge4Na8Te10 used for?
What is the band gap of Ge4Na8Te10?
Is Ge4Na8Te10 a metal, semiconductor, or insulator?
Is Ge4Na8Te10 thermodynamically stable?
What is the crystal structure of Ge4Na8Te10?
What is the density of Ge4Na8Te10?
How many polymorphs of Ge4Na8Te10 are known?
What elements does Ge4Na8Te10 contain?
Where does the data for Ge4Na8Te10 come from?
How It Compares
Within the phase-change memory materials class.
Within the diverse family of telluride-based phase-change materials, Ge4Na8Te10 distinguishes itself through its specific stoichiometry compared to more traditional binary systems like GeTe or complex alloys like Ge2Sb2Te5. While GeTe remains the foundational benchmark for the class, the inclusion of sodium in the Ge4Na8Te10 lattice provides a distinct structural framework that offers an alternative pathway for tuning phase-change kinetics and thermal stability.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
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