Ge2Se1Te1

Ge2Se1Te1 is a semiconducting chalcogenide alloy used in the development of phase-change memory technology.

Crystal structure of Ge2Se1Te1 (trigonal, R-3m (No. 166))
Ground-state structure · Materials Project
Overview

About Ge2Se1Te1

Ge2Se1Te1 is a semiconducting chalcogenide alloy that belongs to the class of phase-change memory materials. As a metastable compound, it is characterized by its ability to transition between amorphous and crystalline states, a property that is essential for high-speed data storage applications.

This material is of significant interest in materials science due to its structural versatility, with numerous reported configurations. Its electronic properties make it a candidate for advanced memory architectures that require efficient switching and long-term stability in electronic devices.

At a glance

Key Properties

Cross-validated computational properties for Ge2Se1Te1, aggregated across 2 databases.

Band Gap

0.25 eV
Range across DFT structures

Energy Above Hull

0.025 eV/atom
Best (lowest) across sources

Stability

Metastable
1 DFT source

Structures

26
2 databases, 15 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for Ge2Se1Te1, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
R-3m (No. 166)trigonal0.250.0250-4.3245.91
P4/mmm (No. 123)
P4mm (No. 99)
Fm-3m (No. 225)
Pm (No. 6)
P4/mmm (No. 123)
Pmmm (No. 47)
Pmmm (No. 47)
Cm (No. 8)
Cmmm (No. 65)
P4/mmm (No. 123)
R-3m (No. 166)
Uses

Applications

Where Ge2Se1Te1 is used.

Phase-change memory devicesNon-volatile data storageNeuromorphic computing hardware
Reference

Frequently Asked Questions

Common questions about Ge2Se1Te1, answered from cross-validated data.

What is Ge2Se1Te1?

Ge2Se1Te1 is a semiconducting chalcogenide alloy used in the development of phase-change memory technology.

More questions
What is Ge2Se1Te1 used for?
Ge2Se1Te1 is used in phase-change memory devices, non-volatile data storage, and neuromorphic computing hardware.
What is the band gap of Ge2Se1Te1?
Ge2Se1Te1 has a DFT-computed band gap of 0.25 eV across 26 reported structures.
Is Ge2Se1Te1 a metal, semiconductor, or insulator?
With a band gap up to 0.25 eV it is a semiconductor.
Is Ge2Se1Te1 thermodynamically stable?
Ge2Se1Te1 has a lowest energy above hull of 0.025 eV/atom (metastable).
What is the crystal structure of Ge2Se1Te1?
The lowest-energy reported polymorph of Ge2Se1Te1 is trigonal symmetry, space group R-3m (No. 166).
What is the density of Ge2Se1Te1?
The computed density of the ground-state structure of Ge2Se1Te1 is 5.91 g/cm³.
How many polymorphs of Ge2Se1Te1 are known?
26 structures of Ge2Se1Te1 are reported across 2 databases, spanning 15 distinct space groups.
What elements does Ge2Se1Te1 contain?
Ge2Se1Te1 contains Ge, Se, and Te (3 elements).
Where does the data for Ge2Se1Te1 come from?
Ge2Se1Te1 data is cross-referenced from materials_project, aflow.
Comparison

How It Compares

Within the phase-change memory materials class.

Within the diverse family of phase-change materials, Ge2Se1Te1 occupies a niche position alongside well-established compounds like Ge2Sb2Te5 and GeTe. While GeTe serves as a foundational binary system for phase-change research, the addition of selenium in Ge2Se1Te1 modifies the kinetics of the phase transition, offering a tunable alternative for optimizing the thermal stability and switching speeds required for modern memory cells.

Explore

Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).

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