Ge2Bi2Te5
Ge2Bi2Te5 is a semiconducting phase-change material designed for potential use in non-volatile memory technologies.
About Ge2Bi2Te5
Ge2Bi2Te5 is a semiconducting chalcogenide compound that belongs to the class of phase-change memory materials. Its electronic properties and structural flexibility make it a subject of interest for advanced computing architectures that rely on rapid, reversible transitions between amorphous and crystalline states.
As a near-hull stable material, it is considered a viable candidate for synthesis and experimental investigation. Its role within the broader family of telluride-based compounds centers on its ability to support high-density data storage applications where thermal and structural stability are paramount.
Key Properties
Cross-validated computational properties for Ge2Bi2Te5, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ge2Bi2Te5, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P-3m1 (No. 164) | trigonal | 0.56 | 0.0157 | -30.356 | 6.96 |
| R3m (No. 160) | trigonal | 0.06 | 0.0204 | -30.352 | 6.46 |
| P-3m1 (No. 164) | Trigonal | — | — | — | 6.96 |
| P-3m1 (No. 164) | Trigonal | — | — | — | 7.14 |
| P-3m1 (No. 164) | — | — | — | — | — |
| P-3m1 (No. 164) | Trigonal | — | — | — | 7.08 |
Applications
Where Ge2Bi2Te5 is used.
Frequently Asked Questions
Common questions about Ge2Bi2Te5, answered from cross-validated data.
What is Ge2Bi2Te5?
Ge2Bi2Te5 is a semiconducting phase-change material designed for potential use in non-volatile memory technologies.
What is Ge2Bi2Te5 used for?
What is the band gap of Ge2Bi2Te5?
Is Ge2Bi2Te5 a metal, semiconductor, or insulator?
Is Ge2Bi2Te5 thermodynamically stable?
What is the crystal structure of Ge2Bi2Te5?
What is the density of Ge2Bi2Te5?
How many polymorphs of Ge2Bi2Te5 are known?
What elements does Ge2Bi2Te5 contain?
Where does the data for Ge2Bi2Te5 come from?
How It Compares
Within the phase-change memory materials class.
Within the diverse family of phase-change materials, Ge2Bi2Te5 occupies a specialized niche compared to the industry-standard Ge2Sb2Te5. While Ge2Sb2Te5 is widely recognized for its optimized switching kinetics, Ge2Bi2Te5 provides a distinct chemical alternative that explores the impact of bismuth substitution on the electronic and phase-transition characteristics inherent to the Ge-Bi-Te system.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- mpaloe — Data from mpaloe.
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
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