Ge1Te1

Ge1Te1 has a DFT band gap of 0.15–2.18 eV across 50 reported structures in 11 space groups. Cross-validated across 3 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Ge1Te1, aggregated across 3 databases.

Band Gap

0.15–2.18 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

50
3 databases, 11 space groups
Reference

Frequently Asked Questions

Common questions about Ge1Te1, answered from cross-validated data.

What is the band gap of Ge1Te1?

Ge1Te1 has a DFT-computed band gap of 0.15–2.18 eV across 50 reported structures.

More questions
Is Ge1Te1 a metal, semiconductor, or insulator?
With a band gap up to 2.18 eV it is a semiconductor.
Is Ge1Te1 thermodynamically stable?
Yes — Ge1Te1 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of Ge1Te1 are known?
50 structures of Ge1Te1 are reported across 3 databases, spanning 11 distinct space groups.
What elements does Ge1Te1 contain?
Ge1Te1 contains Ge and Te (2 elements).
Where does the data for Ge1Te1 come from?
Ge1Te1 data is cross-referenced from latticegraph.
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Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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