Ge1Sb1Te2

Ge1Sb1Te2 is a semiconducting phase-change material used in the research and development of advanced non-volatile memory storage technologies.

Overview

About Ge1Sb1Te2

Ge1Sb1Te2 is a semiconducting member of the phase-change material family, characterized by its ability to rapidly transition between amorphous and crystalline states. Its near-hull thermodynamic stability suggests it is a viable candidate for synthesis and integration into advanced electronic devices.

This compound plays a critical role in the development of non-volatile memory technologies. By leveraging its distinct electronic properties, researchers utilize this material to enable efficient data switching and storage capabilities that are essential for high-performance computing architectures.

At a glance

Key Properties

Cross-validated computational properties for Ge1Sb1Te2, aggregated across 2 databases.

Band Gap

0.19–0.24 eV
Range across DFT structures

Energy Above Hull

0.007 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
1 DFT source

Structures

29
2 databases, 18 space groups
Uses

Applications

Where Ge1Sb1Te2 is used.

Phase-change random access memoryNon-volatile electronic memoryHigh-speed data storage devices
Reference

Frequently Asked Questions

Common questions about Ge1Sb1Te2, answered from cross-validated data.

What is Ge1Sb1Te2?

Ge1Sb1Te2 is a semiconducting phase-change material used in the research and development of advanced non-volatile memory storage technologies.

More questions
What is Ge1Sb1Te2 used for?
Ge1Sb1Te2 is used in phase-change random access memory, non-volatile electronic memory, and high-speed data storage devices.
What is the band gap of Ge1Sb1Te2?
Ge1Sb1Te2 has a DFT-computed band gap of 0.19–0.24 eV across 29 reported structures.
Is Ge1Sb1Te2 a metal, semiconductor, or insulator?
With a band gap up to 0.24 eV it is a semiconductor.
Is Ge1Sb1Te2 thermodynamically stable?
Ge1Sb1Te2 has a lowest energy above hull of 0.007 eV/atom (near hull (likely stable)).
How many polymorphs of Ge1Sb1Te2 are known?
29 structures of Ge1Sb1Te2 are reported across 2 databases, spanning 18 distinct space groups.
What elements does Ge1Sb1Te2 contain?
Ge1Sb1Te2 contains Ge, Sb, and Te (3 elements).
Where does the data for Ge1Sb1Te2 come from?
Ge1Sb1Te2 data is cross-referenced from latticegraph.
Comparison

How It Compares

Within the phase-change memory materials class.

Within the diverse class of phase-change materials, Ge1Sb1Te2 occupies a unique niche alongside well-known compounds like Ge2Sb2Te5. While Ge2Sb2Te5 remains the industry standard for its robust switching performance, Ge1Sb1Te2 offers a distinct compositional balance that provides researchers with a different set of structural and electronic parameters for optimizing memory device endurance and speed.

Explore

Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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