F12Sb2Te4

F12Sb2Te4 is a metastable semiconducting compound used in the study and development of phase-change memory technologies.

Crystal structure of F12Sb2Te4
Ground-state structure · Materials Project
Overview

About F12Sb2Te4

F12Sb2Te4 is a specialized semiconducting compound classified within the family of phase-change memory materials. Its structural configuration and electronic properties make it a subject of interest for researchers investigating non-volatile memory technologies that rely on reversible transitions between amorphous and crystalline states.

As a metastable material, it exhibits distinct structural characteristics that are critical for high-speed switching applications. The compound is part of a broader class of telluride-based systems that are engineered to provide reliable data retention and rapid state changes in next-generation computing architectures.

At a glance

Key Properties

Cross-validated computational properties for F12Sb2Te4, aggregated across 3 databases.

Band Gap

0.99 eV
Range across DFT structures

Energy Above Hull

0.087 eV/atom
Best (lowest) across sources

Stability

Metastable
2 DFT sources

Structures

3
3 databases, 1 space group
Uses

Applications

Where F12Sb2Te4 is used.

Phase-change memory researchNon-volatile memory developmentElectronic switching devices
Reference

Frequently Asked Questions

Common questions about F12Sb2Te4, answered from cross-validated data.

What is F12Sb2Te4?

F12Sb2Te4 is a metastable semiconducting compound used in the study and development of phase-change memory technologies.

More questions
What is F12Sb2Te4 used for?
F12Sb2Te4 is used in phase-change memory research, non-volatile memory development, and electronic switching devices.
What is the band gap of F12Sb2Te4?
F12Sb2Te4 has a DFT-computed band gap of 0.99 eV across 3 reported structures.
Is F12Sb2Te4 a metal, semiconductor, or insulator?
With a band gap up to 0.99 eV it is a semiconductor.
Is F12Sb2Te4 thermodynamically stable?
F12Sb2Te4 has a lowest energy above hull of 0.087 eV/atom (metastable).
How many polymorphs of F12Sb2Te4 are known?
3 structures of F12Sb2Te4 are reported across 3 databases, spanning 1 distinct space group.
What elements does F12Sb2Te4 contain?
F12Sb2Te4 contains F, Sb, and Te (3 elements).
Where does the data for F12Sb2Te4 come from?
F12Sb2Te4 data is cross-referenced from latticegraph.
Comparison

How It Compares

Within the phase-change memory materials class.

Within the diverse landscape of phase-change memory materials, F12Sb2Te4 occupies a distinct niche compared to more widely utilized siblings like Ge2Sb2Te5 or Sb2Te3. While many of its counterparts are optimized for industrial-scale data storage, this specific compound offers a unique structural profile that provides researchers with a different pathway for exploring phase-change kinetics and electronic switching behavior.

Explore

Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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