Cl1In1Te1

Cl1In1Te1 is a stable, semiconducting inorganic compound utilized in the study and development of phase-change memory technologies.

Crystal structure of Cl1In1Te1 (monoclinic, P21/c (No. 14))
Ground-state structure · Materials Project
Overview

About Cl1In1Te1

Cl1In1Te1 is a semiconducting compound belonging to the class of phase-change memory materials. As a thermodynamically stable phase on the convex hull, it represents a robust candidate for research into structural transitions that underpin next-generation non-volatile memory technologies.

Its electronic character makes it an intriguing subject for studying the switching dynamics essential for data storage. By leveraging its stable crystalline structure, researchers can explore the fundamental mechanisms that allow phase-change materials to toggle between states for high-speed, reliable information processing.

At a glance

Key Properties

Cross-validated computational properties for Cl1In1Te1, aggregated across 2 databases.

Band Gap

1.66 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

10
2 databases, 6 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for Cl1In1Te1, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
P21/c (No. 14)monoclinic1.660.0000-18.8744.71
F-43m (No. 216)
Imm2 (No. 44)
I4mm (No. 107)
P3m1 (No. 156)
F-43m (No. 216)
Fmm2 (No. 42)
F-43m (No. 216)
I4mm (No. 107)
P3m1 (No. 156)
Uses

Applications

Where Cl1In1Te1 is used.

Phase-change memory researchNon-volatile data storage developmentSemiconductor device physics
Intellectual Property

Patent Landscape

1 patent reference Cl1In1Te1 or close compositional variants.

PatentTitleAssigneeGranted
8248032Charging system for prioritizing load consumption in a notebook computer
Reference

Frequently Asked Questions

Common questions about Cl1In1Te1, answered from cross-validated data.

What is Cl1In1Te1?

Cl1In1Te1 is a stable, semiconducting inorganic compound utilized in the study and development of phase-change memory technologies.

More questions
What is Cl1In1Te1 used for?
Cl1In1Te1 is used in phase-change memory research, non-volatile data storage development, and semiconductor device physics.
What is the band gap of Cl1In1Te1?
Cl1In1Te1 has a DFT-computed band gap of 1.66 eV across 10 reported structures.
Is Cl1In1Te1 a metal, semiconductor, or insulator?
With a band gap up to 1.66 eV it is a semiconductor.
Is Cl1In1Te1 thermodynamically stable?
Yes — Cl1In1Te1 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of Cl1In1Te1?
The lowest-energy reported polymorph of Cl1In1Te1 is monoclinic symmetry, space group P21/c (No. 14).
What is the density of Cl1In1Te1?
The computed density of the ground-state structure of Cl1In1Te1 is 4.71 g/cm³.
How many polymorphs of Cl1In1Te1 are known?
10 structures of Cl1In1Te1 are reported across 2 databases, spanning 6 distinct space groups.
What elements does Cl1In1Te1 contain?
Cl1In1Te1 contains Cl, In, and Te (3 elements).
Where does the data for Cl1In1Te1 come from?
Cl1In1Te1 data is cross-referenced from materials_project, aflow.
Comparison

How It Compares

Within the phase-change memory materials class.

Within the landscape of phase-change memory materials, Cl1In1Te1 offers a distinct chemical profile compared to more traditional chalcogenides like GeTe or Sb2Te3. While many class members rely on complex ternary or quaternary compositions to optimize switching speeds, this compound provides a simpler, stable framework that serves as a valuable reference point for understanding the influence of halogen incorporation on phase-change behavior.

Explore

Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).

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