Cd1In1Te2
Cd1In1Te2 is a thermodynamically stable semiconducting compound utilized in the study and development of phase-change memory technologies.
About Cd1In1Te2
Cd1In1Te2 is a semiconducting compound that occupies a stable position on the convex hull, indicating significant thermodynamic robustness. As a member of the phase-change memory material family, it is characterized by its ability to transition between structural states, a property essential for next-generation non-volatile data storage technologies.
This material is of particular interest to researchers investigating the fundamental mechanisms of phase switching. Its stability and electronic properties make it a compelling candidate for exploring how atomic arrangements influence memory performance and switching speed in high-density electronic devices.
Key Properties
Cross-validated computational properties for Cd1In1Te2, aggregated across 2 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Cd1In1Te2, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| I-4 (No. 82) | tetragonal | 0.85 | 0.0000 | -24.355 | 5.50 |
| Cm (No. 8) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
| Cmm2 (No. 35) | — | — | — | — | — |
| Pmmm (No. 47) | — | — | — | — | — |
| R-3m (No. 166) | — | — | — | — | — |
| R3m (No. 160) | — | — | — | — | — |
| P2/m (No. 10) | — | — | — | — | — |
| Pmmm (No. 47) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
| I-4m2 (No. 119) | — | — | — | — | — |
| Pm (No. 6) | — | — | — | — | — |
Applications
Where Cd1In1Te2 is used.
Patent Landscape
1 patent reference Cd1In1Te2 or close compositional variants.
| Patent | Title | Assignee | Granted |
|---|---|---|---|
| 8248032 | Charging system for prioritizing load consumption in a notebook computer | — | — |
Frequently Asked Questions
Common questions about Cd1In1Te2, answered from cross-validated data.
What is Cd1In1Te2?
Cd1In1Te2 is a thermodynamically stable semiconducting compound utilized in the study and development of phase-change memory technologies.
What is Cd1In1Te2 used for?
What is the band gap of Cd1In1Te2?
Is Cd1In1Te2 a metal, semiconductor, or insulator?
Is Cd1In1Te2 thermodynamically stable?
What is the crystal structure of Cd1In1Te2?
What is the density of Cd1In1Te2?
How many polymorphs of Cd1In1Te2 are known?
What elements does Cd1In1Te2 contain?
Where does the data for Cd1In1Te2 come from?
How It Compares
Within the phase-change memory materials class.
Within the diverse landscape of phase-change materials, Cd1In1Te2 represents a distinct ternary combination compared to binary standards like GeTe or Sb2Te3. While many common phase-change materials rely on germanium or antimony to facilitate rapid switching, the inclusion of cadmium and indium provides a unique structural framework that differentiates its crystallization kinetics and electronic behavior from siblings like AgSbTe2.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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