Br4In4Te4

Br4In4Te4 is a stable, semiconducting inorganic compound utilized in the study and development of phase-change memory technologies.

Crystal structure of Br4In4Te4 (monoclinic, P21/c (No. 14))
Ground-state structure · Materials Project
Overview

About Br4In4Te4

Br4In4Te4 is a semiconducting compound belonging to the class of phase-change memory materials. As a thermodynamically stable phase located on the convex hull, it represents a robust candidate for research into reversible structural transitions essential for next-generation non-volatile memory devices. Its specific electronic configuration allows for the distinct switching behavior required in high-density storage applications.

The material is characterized by its structural diversity, with multiple reported configurations across crystallographic databases. This versatility makes it an intriguing subject for materials scientists aiming to optimize the performance and longevity of phase-change systems, where the ability to transition between amorphous and crystalline states is paramount.

At a glance

Key Properties

Cross-validated computational properties for Br4In4Te4, aggregated across 3 databases.

Band Gap

1.74 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

3
3 databases, 1 space group
Crystallography

Reported Structures

Lowest-energy structures reported for Br4In4Te4, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
P21/c (No. 14)monoclinic1.740.0000-3.4024.85
P21/c (No. 14)
4.99
Uses

Applications

Where Br4In4Te4 is used.

Non-volatile memory devicesPhase-change data storageSemiconductor research
Reference

Frequently Asked Questions

Common questions about Br4In4Te4, answered from cross-validated data.

What is Br4In4Te4?

Br4In4Te4 is a stable, semiconducting inorganic compound utilized in the study and development of phase-change memory technologies.

More questions
What is Br4In4Te4 used for?
Br4In4Te4 is used in non-volatile memory devices, phase-change data storage, and semiconductor research.
What is the band gap of Br4In4Te4?
Br4In4Te4 has a DFT-computed band gap of 1.74 eV across 3 reported structures.
Is Br4In4Te4 a metal, semiconductor, or insulator?
With a band gap up to 1.74 eV it is a semiconductor.
Is Br4In4Te4 thermodynamically stable?
Yes — Br4In4Te4 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of Br4In4Te4?
The lowest-energy reported polymorph of Br4In4Te4 is monoclinic symmetry, space group P21/c (No. 14).
What is the density of Br4In4Te4?
The computed density of the ground-state structure of Br4In4Te4 is 4.85 g/cm³.
How many polymorphs of Br4In4Te4 are known?
3 structures of Br4In4Te4 are reported across 3 databases, spanning 1 distinct space group.
What elements does Br4In4Te4 contain?
Br4In4Te4 contains Br, In, and Te (3 elements).
Where does the data for Br4In4Te4 come from?
Br4In4Te4 data is cross-referenced from materials_project, aflow, omat24.
Comparison

How It Compares

Within the phase-change memory materials class.

Within the diverse landscape of phase-change materials, Br4In4Te4 occupies a unique position compared to more traditional binary and ternary chalcogenides like GeTe or Sb2Te3. While many members of this class rely on germanium or antimony to facilitate rapid switching, the inclusion of bromine and indium in this structure offers a distinct chemical pathway for tuning the electronic and thermal properties necessary for memory cell optimization.

Explore

Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
  • omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).

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