BaSbTe3

BaSbTe3 is a thermodynamically stable semiconducting chalcogenide used in the development of advanced phase-change memory technologies.

Crystal structure of BaSbTe3 (orthorhombic, P212121 (No. 19))
Ground-state structure · Materials Project
Overview

About BaSbTe3

BaSbTe3 is a semiconducting ternary chalcogenide that sits firmly on the convex hull, indicating notable thermodynamic stability. As a member of the phase-change memory material class, it possesses the structural characteristics necessary to undergo reversible transitions between amorphous and crystalline states, which is fundamental for high-density data storage applications. Its unique composition of barium, antimony, and tellurium allows for distinct electronic behavior compared to more traditional binary systems. This stability makes it an intriguing candidate for research into durable, long-lasting memory devices that require reliable switching performance over numerous cycles. By leveraging its specific electronic character, engineers can explore new pathways for optimizing the energy efficiency and speed of next-generation non-volatile memory architectures.

At a glance

Key Properties

Cross-validated computational properties for BaSbTe3, aggregated across 3 databases.

Band Gap

0.62 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

4
3 databases, 1 space group
Crystallography

Reported Structures

Lowest-energy structures reported for BaSbTe3, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
P212121 (No. 19)orthorhombic0.620.0000-4.1375.76
5.42
Uses

Applications

Where BaSbTe3 is used.

Phase-change memory devicesNon-volatile data storageNeuromorphic computing architectures
Reference

Frequently Asked Questions

Common questions about BaSbTe3, answered from cross-validated data.

What is BaSbTe3?

BaSbTe3 is a thermodynamically stable semiconducting chalcogenide used in the development of advanced phase-change memory technologies.

More questions
What is BaSbTe3 used for?
BaSbTe3 is used in phase-change memory devices, non-volatile data storage, and neuromorphic computing architectures.
What is the band gap of BaSbTe3?
BaSbTe3 has a DFT-computed band gap of 0.62 eV across 4 reported structures.
Is BaSbTe3 a metal, semiconductor, or insulator?
With a band gap up to 0.62 eV it is a semiconductor.
Is BaSbTe3 thermodynamically stable?
Yes — BaSbTe3 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of BaSbTe3?
The lowest-energy reported polymorph of BaSbTe3 is orthorhombic symmetry, space group P212121 (No. 19).
What is the density of BaSbTe3?
The computed density of the ground-state structure of BaSbTe3 is 5.76 g/cm³.
How many polymorphs of BaSbTe3 are known?
4 structures of BaSbTe3 are reported across 3 databases, spanning 1 distinct space group.
What elements does BaSbTe3 contain?
BaSbTe3 contains Ba, Sb, and Te (3 elements).
Where does the data for BaSbTe3 come from?
BaSbTe3 data is cross-referenced from materials_project, omat24, alexandria.
Comparison

How It Compares

Within the phase-change memory materials class.

Within the diverse family of phase-change materials, BaSbTe3 offers a distinct alternative to the widely utilized Ge2Sb2Te5 and Sb2Te3. While many of its siblings rely on germanium or silver to tune phase-transition kinetics, the inclusion of barium provides a different structural framework that influences its stability profile and switching dynamics, marking it as a specialized member of the telluride-based memory material group.

Explore

Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
  • alexandria — Data from alexandria.

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