BaInTe2
BaInTe2 is a stable, semiconducting telluride compound utilized in the study and development of phase-change memory technologies.
About BaInTe2
BaInTe2 is a semiconducting ternary chalcogenide that sits securely on the thermodynamic convex hull, indicating robust structural stability. As a member of the phase-change material family, it leverages its unique electronic character to facilitate reversible transitions between structural states, which is the foundational mechanism for non-volatile memory applications.
This compound is of significant interest for researchers developing next-generation data storage solutions that require high endurance and rapid switching speeds. Its stability and predictable electronic behavior make it a compelling candidate for integration into complex memory architectures where reliable phase-switching performance is essential.
Key Properties
Cross-validated computational properties for BaInTe2, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for BaInTe2, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Cccm (No. 66) | orthorhombic | 0.96 | 0.0000 | -3.876 | 5.36 |
| I422 (No. 97) | tetragonal | 0.86 | 0.0134 | -3.863 | 5.40 |
| P4mm (No. 99) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
| P4mm (No. 99) | — | — | — | — | — |
Applications
Where BaInTe2 is used.
Frequently Asked Questions
Common questions about BaInTe2, answered from cross-validated data.
What is BaInTe2?
BaInTe2 is a stable, semiconducting telluride compound utilized in the study and development of phase-change memory technologies.
What is BaInTe2 used for?
What is the band gap of BaInTe2?
Is BaInTe2 a metal, semiconductor, or insulator?
Is BaInTe2 thermodynamically stable?
What is the crystal structure of BaInTe2?
What is the density of BaInTe2?
How many polymorphs of BaInTe2 are known?
What elements does BaInTe2 contain?
Where does the data for BaInTe2 come from?
How It Compares
Within the phase-change memory materials class.
While industry standards like Ge2Sb2Te5 dominate the phase-change memory landscape due to their well-characterized switching kinetics, BaInTe2 offers a distinct structural profile within the broader class of telluride-based semiconductors. Unlike the binary systems such as GeTe or Ag2Te, the inclusion of barium provides a unique chemical environment that potentially alters the crystallization dynamics and thermal stability compared to more conventional siblings like In2Te3 or AgSbTe2.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- nomad — Data from NOMAD. Cite: Draxl & Scheffler, J. Phys. Mater. 2, 036001 (2019).
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
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