Ba4Er2In2Te10
Ba4Er2In2Te10 is a complex semiconducting quaternary telluride investigated for its potential utility in phase-change memory applications.
About Ba4Er2In2Te10
Ba4Er2In2Te10 is a complex quaternary telluride that functions as a semiconducting material. Its structural arrangement and electronic properties position it within the specialized family of phase-change memory materials, which are essential for next-generation non-volatile data storage technologies.
As a near-hull stable compound, it is considered a viable candidate for experimental synthesis and characterization. Its unique composition of barium, erbium, indium, and tellurium offers a distinct chemical landscape compared to simpler binary chalcogenides, potentially providing tunable switching characteristics for advanced memory devices.
Key Properties
Cross-validated computational properties for Ba4Er2In2Te10, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Applications
Where Ba4Er2In2Te10 is used.
Frequently Asked Questions
Common questions about Ba4Er2In2Te10, answered from cross-validated data.
What is Ba4Er2In2Te10?
Ba4Er2In2Te10 is a complex semiconducting quaternary telluride investigated for its potential utility in phase-change memory applications.
What is Ba4Er2In2Te10 used for?
What is the band gap of Ba4Er2In2Te10?
Is Ba4Er2In2Te10 a metal, semiconductor, or insulator?
Is Ba4Er2In2Te10 thermodynamically stable?
How many polymorphs of Ba4Er2In2Te10 are known?
What elements does Ba4Er2In2Te10 contain?
Where does the data for Ba4Er2In2Te10 come from?
How It Compares
Within the phase-change memory materials class.
Unlike the widely utilized binary and ternary standards such as GeTe or AgSbTe2, Ba4Er2In2Te10 represents a more complex structural architecture. While traditional materials like Ge2Sb2Te5 are the industry benchmarks for phase-change performance, this quaternary compound explores the frontier of compositional complexity, aiming to refine the stability and switching kinetics found in simpler siblings like In2Te3.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- latticegraph — Lattice Graph Materials Intelligence Platform
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