Ba2YInTe5

Ba2YInTe5 is a semiconducting quaternary telluride compound being explored for its potential utility in advanced phase-change memory storage technologies.

Crystal structure of Ba2YInTe5
Ground-state structure · Materials Project
Overview

About Ba2YInTe5

Ba2YInTe5 is a complex quaternary chalcogenide that functions as a semiconducting material within the broader family of phase-change memory candidates. Its composition, involving barium, yttrium, indium, and tellurium, positions it as a structurally intriguing candidate for non-volatile memory technologies that rely on reversible transitions between amorphous and crystalline states.

The material is characterized by its near-hull thermodynamic stability, suggesting that it is a viable target for experimental synthesis. As a member of the phase-change class, it is studied for its potential to facilitate rapid, energy-efficient switching, which is essential for the next generation of high-density, high-speed electronic memory devices.

At a glance

Key Properties

Cross-validated computational properties for Ba2YInTe5, aggregated across 3 databases.

Band Gap

0.47 eV
Range across DFT structures

Energy Above Hull

0.014 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
1 DFT source

Structures

3
3 databases, 2 space groups
Uses

Applications

Where Ba2YInTe5 is used.

Phase-change memory devicesNon-volatile electronic memorySolid-state data storage research
Reference

Frequently Asked Questions

Common questions about Ba2YInTe5, answered from cross-validated data.

What is Ba2YInTe5?

Ba2YInTe5 is a semiconducting quaternary telluride compound being explored for its potential utility in advanced phase-change memory storage technologies.

More questions
What is Ba2YInTe5 used for?
Ba2YInTe5 is used in phase-change memory devices, non-volatile electronic memory, and solid-state data storage research.
What is the band gap of Ba2YInTe5?
Ba2YInTe5 has a DFT-computed band gap of 0.47 eV across 3 reported structures.
Is Ba2YInTe5 a metal, semiconductor, or insulator?
With a band gap up to 0.47 eV it is a semiconductor.
Is Ba2YInTe5 thermodynamically stable?
Ba2YInTe5 has a lowest energy above hull of 0.014 eV/atom (near hull (likely stable)).
How many polymorphs of Ba2YInTe5 are known?
3 structures of Ba2YInTe5 are reported across 3 databases, spanning 2 distinct space groups.
What elements does Ba2YInTe5 contain?
Ba2YInTe5 contains Ba, In, Te, and Y (4 elements).
Where does the data for Ba2YInTe5 come from?
Ba2YInTe5 data is cross-referenced from latticegraph.
Comparison

How It Compares

Within the phase-change memory materials class.

While traditional phase-change materials like GeTe and Ge2Sb2Te5 are widely recognized for their rapid crystallization kinetics, Ba2YInTe5 offers a distinct chemical architecture that diversifies the structural space available for memory design. Unlike simpler binary tellurides such as Ag2Te or AgTe, this quaternary compound incorporates rare-earth and alkaline-earth elements to tune its electronic and thermal properties, potentially providing a more stable alternative to the binary and ternary systems commonly used in current industry applications.

Explore

Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

Analyze Ba2YInTe5 in the Lattice Graph platform

Polymorph comparison, confidence scoring, supply-chain risk, and patent monitoring — across 53 integrated data sources.

Explore the Platform →