Ba2YInTe5
Ba2YInTe5 is a semiconducting quaternary telluride compound being explored for its potential utility in advanced phase-change memory storage technologies.
About Ba2YInTe5
Ba2YInTe5 is a complex quaternary chalcogenide that functions as a semiconducting material within the broader family of phase-change memory candidates. Its composition, involving barium, yttrium, indium, and tellurium, positions it as a structurally intriguing candidate for non-volatile memory technologies that rely on reversible transitions between amorphous and crystalline states.
The material is characterized by its near-hull thermodynamic stability, suggesting that it is a viable target for experimental synthesis. As a member of the phase-change class, it is studied for its potential to facilitate rapid, energy-efficient switching, which is essential for the next generation of high-density, high-speed electronic memory devices.
Key Properties
Cross-validated computational properties for Ba2YInTe5, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ba2YInTe5, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Cmc21 (No. 36) | orthorhombic | 0.47 | 0.0142 | -4.725 | 5.43 |
| No. 0 | unknown | — | — | — | 1.45 |
| Cmc21 (No. 36) | — | — | — | — | — |
Applications
Where Ba2YInTe5 is used.
Frequently Asked Questions
Common questions about Ba2YInTe5, answered from cross-validated data.
What is Ba2YInTe5?
Ba2YInTe5 is a semiconducting quaternary telluride compound being explored for its potential utility in advanced phase-change memory storage technologies.
What is Ba2YInTe5 used for?
What is the band gap of Ba2YInTe5?
Is Ba2YInTe5 a metal, semiconductor, or insulator?
Is Ba2YInTe5 thermodynamically stable?
What is the crystal structure of Ba2YInTe5?
What is the density of Ba2YInTe5?
How many polymorphs of Ba2YInTe5 are known?
What elements does Ba2YInTe5 contain?
Where does the data for Ba2YInTe5 come from?
How It Compares
Within the phase-change memory materials class.
While traditional phase-change materials like GeTe and Ge2Sb2Te5 are widely recognized for their rapid crystallization kinetics, Ba2YInTe5 offers a distinct chemical architecture that diversifies the structural space available for memory design. Unlike simpler binary tellurides such as Ag2Te or AgTe, this quaternary compound incorporates rare-earth and alkaline-earth elements to tune its electronic and thermal properties, potentially providing a more stable alternative to the binary and ternary systems commonly used in current industry applications.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
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