Ba2NdInTe5
Ba2NdInTe5 is a semiconducting quaternary telluride compound being investigated for its potential utility in phase-change memory technologies.
About Ba2NdInTe5
Ba2NdInTe5 is a complex quaternary telluride that functions as a semiconducting material. Its electronic properties and structural configuration position it within the broader family of chalcogenide-based phase-change materials, which are critical for high-speed, non-volatile data storage applications. The compound is identified as being near the thermodynamic hull, suggesting it is a viable candidate for experimental synthesis and characterization.
This material represents a specialized addition to the landscape of phase-change memory research. By incorporating rare-earth and alkaline-earth components into a telluride framework, it expands the chemical space available for tuning switching behaviors and thermal stability, which are essential for the next generation of memory devices.
Key Properties
Cross-validated computational properties for Ba2NdInTe5, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ba2NdInTe5, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Cmc21 (No. 36) | orthorhombic | 0.67 | 0.0057 | -4.544 | 5.64 |
| No. 0 | unknown | — | — | — | 1.50 |
| Cmc21 (No. 36) | — | — | — | — | — |
Applications
Where Ba2NdInTe5 is used.
Frequently Asked Questions
Common questions about Ba2NdInTe5, answered from cross-validated data.
What is Ba2NdInTe5?
Ba2NdInTe5 is a semiconducting quaternary telluride compound being investigated for its potential utility in phase-change memory technologies.
What is Ba2NdInTe5 used for?
What is the band gap of Ba2NdInTe5?
Is Ba2NdInTe5 a metal, semiconductor, or insulator?
Is Ba2NdInTe5 thermodynamically stable?
What is the crystal structure of Ba2NdInTe5?
What is the density of Ba2NdInTe5?
How many polymorphs of Ba2NdInTe5 are known?
What elements does Ba2NdInTe5 contain?
Where does the data for Ba2NdInTe5 come from?
How It Compares
Within the phase-change memory materials class.
Unlike the prototypical binary phase-change materials such as GeTe or the widely utilized ternary systems like AgSbTe2, Ba2NdInTe5 introduces a more complex quaternary stoichiometry. While traditional members like Ge2Sb2Te5 rely on specific structural transitions between amorphous and crystalline states, this compound explores how the inclusion of neodymium and barium influences the semiconducting behavior and stability profile relative to simpler tellurides like Ag2Te or In2Te3.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
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