Ba2DyInTe5

Ba2DyInTe5 is a semiconducting quaternary telluride used in the study of phase-change memory technologies.

Crystal structure of Ba2DyInTe5 (orthorhombic, Cmc21 (No. 36))
Ground-state structure · Materials Project
Overview

About Ba2DyInTe5

Ba2DyInTe5 is a complex quaternary telluride belonging to the class of phase-change memory materials. As a semiconducting compound, it exhibits electronic properties that make it a candidate for non-volatile memory applications where rapid structural transitions are required for data storage.

This material is characterized as being near-hull in terms of thermodynamic stability, suggesting it is a viable candidate for experimental synthesis. Its unique chemical composition involving barium, dysprosium, indium, and tellurium positions it as an intriguing subject for research into next-generation chalcogenide-based electronics.

At a glance

Key Properties

Cross-validated computational properties for Ba2DyInTe5, aggregated across 3 databases.

Band Gap

0.62–0.71 eV
Range across DFT structures · ground state: narrow gap

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

Stable
2 DFT sources

Structures

3
3 databases, 1 space group
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of Ba2DyInTe5. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.96 / 1.00
Trust tier: medium

Hull Spread

0.011 eV
EAH spread across sources

Sources Compared

2
jarvis, materials_project

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for Ba2DyInTe5, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Cmc21 (No. 36)orthorhombic0.620.0000-1.360—
Cmc21 (No. 36)orthorhombic0.710.0109-4.5145.83
Cmc21 (No. 36)orthorhombic———6.19
Uses

Applications

Where Ba2DyInTe5 is used.

Phase-change memory devicesNon-volatile electronic switchingData storage research
Reference

Frequently Asked Questions

Common questions about Ba2DyInTe5, answered from cross-validated data.

What is Ba2DyInTe5?

Ba2DyInTe5 is a semiconducting quaternary telluride used in the study of phase-change memory technologies.

More questions
What is Ba2DyInTe5 used for?
Ba2DyInTe5 is used in phase-change memory devices, non-volatile electronic switching, and data storage research.
What is the band gap of Ba2DyInTe5?
Ba2DyInTe5 has a DFT-computed band gap of 0.62–0.71 eV across 3 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is Ba2DyInTe5 a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 0.71 eV (a semiconductor). Measured gaps are typically larger.
Is Ba2DyInTe5 thermodynamically stable?
Yes — Ba2DyInTe5 sits on the convex hull (energy above hull 0 eV/atom), i.e. stable.
What is the crystal structure of Ba2DyInTe5?
The reference structure of Ba2DyInTe5 is orthorhombic symmetry, space group Cmc21 (No. 36).
How many polymorphs of Ba2DyInTe5 are known?
3 structures of Ba2DyInTe5 are reported across 3 databases, spanning 1 distinct space group.
What elements does Ba2DyInTe5 contain?
Ba2DyInTe5 contains Ba, Dy, In, and Te (4 elements).
Where does the data for Ba2DyInTe5 come from?
Ba2DyInTe5 data is cross-referenced from jarvis, materials_project, cod.
Comparison

How It Compares

Within the phase-change memory materials class.

Unlike the industry-standard phase-change materials such as Ge2Sb2Te5 or Sb2Te3, which are binary or ternary systems often optimized for rapid crystallization, Ba2DyInTe5 introduces rare-earth dysprosium into the lattice. This structural complexity differentiates it from simpler tellurides like Ag2Te or In2Te3, potentially offering unique switching characteristics or improved thermal stability profiles for specialized memory architectures.

Explore

Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • cod — Data from the Crystallography Open Database (crystallography.net/cod/). Cite: Grazulis et al., J. Appl. Cryst. 42, 726 (2009). (CC0-1.0)

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