As6In6

As6In6 has a DFT band gap of 0.57 eV across 11 reported structures in 7 space groups. Cross-validated across 4 computational databases.

At a glance

Key Properties

Cross-validated computational properties for As6In6, aggregated across 4 databases.

Band Gap

0.57 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

11
4 databases, 7 space groups
Reference

Frequently Asked Questions

Common questions about As6In6, answered from cross-validated data.

What is the band gap of As6In6?

As6In6 has a DFT-computed band gap of 0.57 eV across 11 reported structures.

More questions
Is As6In6 a metal, semiconductor, or insulator?
With a band gap up to 0.57 eV it is a semiconductor.
Is As6In6 thermodynamically stable?
Yes — As6In6 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of As6In6 are known?
11 structures of As6In6 are reported across 4 databases, spanning 7 distinct space groups.
What elements does As6In6 contain?
As6In6 contains As and In (2 elements).
Where does the data for As6In6 come from?
As6In6 data is cross-referenced from latticegraph.
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Related Compounds

Other III-V Semiconductors in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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