AgBaTe

AgBaTe is a thermodynamically stable semiconducting compound utilized in the research and development of phase-change memory technologies.

Overview

About AgBaTe

AgBaTe is a semiconducting ternary compound that occupies a stable position on the convex hull, indicating robust thermodynamic favorability. As a member of the phase-change memory material class, it possesses the structural characteristics necessary for reversible state switching, which is essential for next-generation non-volatile memory devices.

Its unique electronic character allows it to function effectively in applications where rapid, reliable transitions between amorphous and crystalline states are required. By leveraging the interplay between silver, barium, and tellurium, this compound contributes to the ongoing development of high-density, energy-efficient data storage solutions.

At a glance

Key Properties

Cross-validated computational properties for AgBaTe, aggregated across 3 databases.

Band Gap

0.67 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

3
3 databases, 2 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for AgBaTe, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Pnma (No. 62)orthorhombic0.670.0000-3.7316.77
Cmcm (No. 63)
5.11
Uses

Applications

Where AgBaTe is used.

Phase-change memory devicesNon-volatile data storageSemiconductor research
Reference

Frequently Asked Questions

Common questions about AgBaTe, answered from cross-validated data.

What is AgBaTe?

AgBaTe is a thermodynamically stable semiconducting compound utilized in the research and development of phase-change memory technologies.

More questions
What is AgBaTe used for?
AgBaTe is used in phase-change memory devices, non-volatile data storage, and semiconductor research.
What is the band gap of AgBaTe?
AgBaTe has a DFT-computed band gap of 0.67 eV across 3 reported structures.
Is AgBaTe a metal, semiconductor, or insulator?
With a band gap up to 0.67 eV it is a semiconductor.
Is AgBaTe thermodynamically stable?
Yes — AgBaTe sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of AgBaTe?
The lowest-energy reported polymorph of AgBaTe is orthorhombic symmetry, space group Pnma (No. 62).
What is the density of AgBaTe?
The computed density of the ground-state structure of AgBaTe is 6.77 g/cm³.
How many polymorphs of AgBaTe are known?
3 structures of AgBaTe are reported across 3 databases, spanning 2 distinct space groups.
What elements does AgBaTe contain?
AgBaTe contains Ag, Ba, and Te (3 elements).
Where does the data for AgBaTe come from?
AgBaTe data is cross-referenced from materials_project, nomad, omat24.
Comparison

How It Compares

Within the phase-change memory materials class.

Within the landscape of phase-change materials, AgBaTe represents a distinct structural alternative to more traditional binary or pseudo-binary systems like GeTe or AgSbTe2. While many common members of this class rely on group 14 or 15 elements to facilitate switching, the inclusion of barium in this ternary lattice offers a unique chemical environment that differentiates its kinetic and thermodynamic behavior from the widely utilized Ag2Te or Sb2Te3.

Explore

Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • nomad — Data from NOMAD. Cite: Draxl & Scheffler, J. Phys. Mater. 2, 036001 (2019).
  • omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).

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