AgBaTe
AgBaTe is a thermodynamically stable semiconducting compound utilized in the research and development of phase-change memory technologies.
About AgBaTe
AgBaTe is a semiconducting ternary compound that occupies a stable position on the convex hull, indicating robust thermodynamic favorability. As a member of the phase-change memory material class, it possesses the structural characteristics necessary for reversible state switching, which is essential for next-generation non-volatile memory devices.
Its unique electronic character allows it to function effectively in applications where rapid, reliable transitions between amorphous and crystalline states are required. By leveraging the interplay between silver, barium, and tellurium, this compound contributes to the ongoing development of high-density, energy-efficient data storage solutions.
Key Properties
Cross-validated computational properties for AgBaTe, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for AgBaTe, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Pnma (No. 62) | orthorhombic | 0.67 | 0.0000 | -3.731 | 6.77 |
| Cmcm (No. 63) | — | — | — | — | — |
| — | — | — | — | — | 5.11 |
Applications
Where AgBaTe is used.
Frequently Asked Questions
Common questions about AgBaTe, answered from cross-validated data.
What is AgBaTe?
AgBaTe is a thermodynamically stable semiconducting compound utilized in the research and development of phase-change memory technologies.
What is AgBaTe used for?
What is the band gap of AgBaTe?
Is AgBaTe a metal, semiconductor, or insulator?
Is AgBaTe thermodynamically stable?
What is the crystal structure of AgBaTe?
What is the density of AgBaTe?
How many polymorphs of AgBaTe are known?
What elements does AgBaTe contain?
Where does the data for AgBaTe come from?
How It Compares
Within the phase-change memory materials class.
Within the landscape of phase-change materials, AgBaTe represents a distinct structural alternative to more traditional binary or pseudo-binary systems like GeTe or AgSbTe2. While many common members of this class rely on group 14 or 15 elements to facilitate switching, the inclusion of barium in this ternary lattice offers a unique chemical environment that differentiates its kinetic and thermodynamic behavior from the widely utilized Ag2Te or Sb2Te3.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- nomad — Data from NOMAD. Cite: Draxl & Scheffler, J. Phys. Mater. 2, 036001 (2019).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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