SiSnO3
SiSnO3 has a DFT band gap of 0.76–2.68 eV across 3 reported structures in 2 space groups. Cross-validated across 2 computational databases.
At a glance
Key Properties
Cross-validated computational properties for SiSnO3, aggregated across 2 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
0.76–2.68 eV
Range across DFT structures
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
0.029 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
Metastable
1 DFT source
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
3
2 databases, 2 space groups
Reference
Frequently Asked Questions
Common questions about SiSnO3, answered from cross-validated data.
What is the band gap of SiSnO3?
SiSnO3 has a DFT-computed band gap of 0.76–2.68 eV across 3 reported structures.
More questions
Is SiSnO3 a metal, semiconductor, or insulator?
With a band gap up to 2.68 eV it is a semiconductor.
Is SiSnO3 thermodynamically stable?
SiSnO3 has a lowest energy above hull of 0.029 eV/atom (metastable).
How many polymorphs of SiSnO3 are known?
3 structures of SiSnO3 are reported across 2 databases, spanning 2 distinct space groups.
What elements does SiSnO3 contain?
SiSnO3 contains O, Si, and Sn (3 elements).
Where does the data for SiSnO3 come from?
SiSnO3 data is cross-referenced from latticegraph.
Reading
Related Research
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Related Compounds
Other Transparent Conducting Oxides in the database.
Data sources & attribution
- latticegraph — Lattice Graph Materials Intelligence Platform
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