SiSnO3

SiSnO3 has a DFT band gap of 0.76–2.68 eV across 3 reported structures in 2 space groups. Cross-validated across 2 computational databases.

At a glance

Key Properties

Cross-validated computational properties for SiSnO3, aggregated across 2 databases.

Band Gap

0.76–2.68 eV
Range across DFT structures

Energy Above Hull

0.029 eV/atom
Best (lowest) across sources

Stability

Metastable
1 DFT source

Structures

3
2 databases, 2 space groups
Reference

Frequently Asked Questions

Common questions about SiSnO3, answered from cross-validated data.

What is the band gap of SiSnO3?

SiSnO3 has a DFT-computed band gap of 0.76–2.68 eV across 3 reported structures.

More questions
Is SiSnO3 a metal, semiconductor, or insulator?
With a band gap up to 2.68 eV it is a semiconductor.
Is SiSnO3 thermodynamically stable?
SiSnO3 has a lowest energy above hull of 0.029 eV/atom (metastable).
How many polymorphs of SiSnO3 are known?
3 structures of SiSnO3 are reported across 2 databases, spanning 2 distinct space groups.
What elements does SiSnO3 contain?
SiSnO3 contains O, Si, and Sn (3 elements).
Where does the data for SiSnO3 come from?
SiSnO3 data is cross-referenced from latticegraph.
Reading

Related Research

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Related Compounds

Other Transparent Conducting Oxides in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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