SiGe
SiGe has a DFT band gap of 0.41–0.61 eV across 48 reported structures in 15 space groups. Cross-validated across 4 computational databases.
At a glance
Key Properties
Cross-validated computational properties for SiGe, aggregated across 4 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
0.41–0.61 eV
Range across DFT structures
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
0.016 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
Near hull (likely stable)
2 DFT sources
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
48
4 databases, 15 space groups
Intellectual Property
Patent Landscape
11 patents reference SiGe or close compositional variants.
| Patent | Title | Assignee | Granted |
|---|---|---|---|
| 10837115 | Pre-treatment composition before etching SiGe and method of fabricating semiconductor device using the same | — | — |
| 5633194 | Low temperature ion-beam assisted deposition methods for realizing SiGe/Si heterostructure | — | — |
| 9752224 | Structure for relaxed SiGe buffers including method and apparatus for forming | — | — |
| 6995076 | Relaxed SiGe films by surfactant mediation | — | — |
| 10125415 | Structure for relaxed SiGe buffers including method and apparatus for forming | — | — |
| 9484199 | PECVD microcrystalline silicon germanium (SiGe) | — | — |
| 10727073 | Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces | — | — |
| 12252780 | Growth method of highly twinned SiGe alloy on the basal plane of trigonal substrate under electron beam irradi | — | — |
| 7176111 | Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof | — | — |
| 8961810 | SiGe matrix nanocomposite materials with an improved thermoelectric figure of merit | — | — |
Reference
Frequently Asked Questions
Common questions about SiGe, answered from cross-validated data.
What is the band gap of SiGe?
SiGe has a DFT-computed band gap of 0.41–0.61 eV across 48 reported structures.
More questions
Is SiGe a metal, semiconductor, or insulator?
With a band gap up to 0.61 eV it is a semiconductor.
Is SiGe thermodynamically stable?
SiGe has a lowest energy above hull of 0.016 eV/atom (near hull (likely stable)).
How many polymorphs of SiGe are known?
48 structures of SiGe are reported across 4 databases, spanning 15 distinct space groups.
What elements does SiGe contain?
SiGe contains Ge and Si (2 elements).
Where does the data for SiGe come from?
SiGe data is cross-referenced from latticegraph.
Explore
Related Compounds
Other Silicon Anode Materials in the database.
Data sources & attribution
- latticegraph — Lattice Graph Materials Intelligence Platform
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