SiC
SiC has a DFT band gap of 1.37–2.30 eV across 442 reported structures in 42 space groups. Cross-validated across 4 computational databases.
At a glance
Key Properties
Cross-validated computational properties for SiC, aggregated across 4 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
1.37–2.30 eV
Range across DFT structures
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
0.000 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
On hull (stable)
2 DFT sources
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
442
4 databases, 42 space groups
Synthesis
Synthesis Routes
Literature-extracted synthesis procedures targeting SiC.
Sol Gel
Procedure available · ceder_sol_gel
Sol Gel
Procedure available · ceder_sol_gel
Sol Gel
Procedure available · ceder_sol_gel
Sol Gel
Procedure available · ceder_sol_gel
Sol Gel
Procedure available · ceder_sol_gel
Solid State
Procedure available · ceder_solid_state
Intellectual Property
Patent Landscape
303 patents reference SiC or close compositional variants.
| Patent | Title | Assignee | Granted |
|---|---|---|---|
| 6531423 | Liquid-phase-sintered SiC shaped bodies with improved fracture toughness and a high electric resistance | — | — |
| 4759836 | Ion implantation of thin film CrSi.sub.2 and SiC resistors | — | — |
| 6491862 | Method for producing SiC preform with high volume fraction | — | — |
| 8940614 | SiC substrate with SiC epitaxial film | — | — |
| 5057465 | Ceramic matrices reinforced with SiC, Si.sub.3 N.sub.4 or SiAlON fibers having a coating of C, B or BN contain | — | — |
| 7855385 | SiC crystal and semiconductor device | — | — |
| 6372304 | Method and apparatus for forming SiC thin film on high polymer base material by plasma CVD | — | — |
| 8604149 | Polysilane-polycarbosilane copolymer solutions and oxygen-depleted ceramic moulded bodies prepared therefrom w | — | — |
| 10106912 | Reaction cell for growing SiC crystal with low dislocation density | — | — |
| 9903047 | Production method of SiC crystal | — | — |
Reference
Frequently Asked Questions
Common questions about SiC, answered from cross-validated data.
What is the band gap of SiC?
SiC has a DFT-computed band gap of 1.37–2.30 eV across 442 reported structures.
More questions
Is SiC a metal, semiconductor, or insulator?
With a band gap up to 2.30 eV it is a semiconductor.
Is SiC thermodynamically stable?
Yes — SiC sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of SiC are known?
442 structures of SiC are reported across 4 databases, spanning 42 distinct space groups.
How is SiC synthesized?
Literature-reported routes for SiC include sol gel, solid state (10 procedures documented).
What elements does SiC contain?
SiC contains C and Si (2 elements).
Where does the data for SiC come from?
SiC data is cross-referenced from latticegraph.
Explore
Related Compounds
Other Silicon Anode Materials in the database.
Data sources & attribution
- latticegraph — Lattice Graph Materials Intelligence Platform
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