Si2Sn2
This compound is a binary intermetallic material composed of silicon and tin. It is primarily studied in materials science for its potential role in advanced semiconductor research and thin-film electronics.
Overview
Key Properties
Cross-validated computational properties for Si2Sn2, aggregated across 4 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
0.43 eV
Range across DFT structures
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
0.192 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
Above hull
3 DFT sources
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
35
4 databases, 13 space groups
Crystallography
Reported Structures
Lowest-energy structures reported for Si2Sn2, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| F-43m (No. 216) | cubic | 0.43 | 0.1920 | -16.568 | 4.36 |
| I41/amd (No. 141) | — | — | — | — | — |
| C2/m (No. 12) | — | — | — | — | — |
| Imma (No. 74) | — | — | — | — | — |
| P4/nmm (No. 129) | — | — | — | — | — |
| P4/nmm (No. 129) | — | — | — | — | — |
| P4/nmm (No. 129) | — | — | — | — | — |
| P4/nmm (No. 129) | — | — | — | — | — |
| P21/m (No. 11) | — | — | — | — | — |
| Imma (No. 74) | — | — | — | — | — |
| P-3m1 (No. 164) | — | — | — | — | — |
| I41/amd (No. 141) | — | — | — | — | — |
Uses
Applications
Where Si2Sn2 is used.
Semiconductor researchThin-film electronics developmentMaterials science experimentation
Reference
Frequently Asked Questions
Common questions about Si2Sn2, answered from cross-validated data.
What is Si2Sn2?
This compound is a binary intermetallic material composed of silicon and tin. It is primarily studied in materials science for its potential role in advanced semiconductor research and thin-film electronics.
More questions
What is Si2Sn2 used for?
Si2Sn2 is used in semiconductor research, thin-film electronics development, and materials science experimentation.
What is the band gap of Si2Sn2?
Si2Sn2 has a DFT-computed band gap of 0.43 eV across 35 reported structures.
Is Si2Sn2 a metal, semiconductor, or insulator?
With a band gap up to 0.43 eV it is a semiconductor.
Is Si2Sn2 thermodynamically stable?
Si2Sn2 has a lowest energy above hull of 0.192 eV/atom (above hull).
What is the crystal structure of Si2Sn2?
The lowest-energy reported polymorph of Si2Sn2 is cubic symmetry, space group F-43m (No. 216).
What is the density of Si2Sn2?
The computed density of the ground-state structure of Si2Sn2 is 4.36 g/cm³.
How many polymorphs of Si2Sn2 are known?
35 structures of Si2Sn2 are reported across 4 databases, spanning 13 distinct space groups.
What elements does Si2Sn2 contain?
Si2Sn2 contains Si and Sn (2 elements).
Where does the data for Si2Sn2 come from?
Si2Sn2 data is cross-referenced from materials_project, nomad, aflow, omat24.
Explore
Related Compounds
Other Silicon Anode Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- nomad — Data from NOMAD. Cite: Draxl & Scheffler, J. Phys. Mater. 2, 036001 (2019).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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