Si2Os
Osmium disilicide is a metallic compound formed from osmium and silicon. It is primarily studied for its structural properties and potential utility in specialized electronic or high-temperature material applications.
Overview
Key Properties
Cross-validated computational properties for Si2Os, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
0.65 eV
Range across DFT structures
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
0.000 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
On hull (stable)
2 DFT sources
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
104
3 databases, 19 space groups
Crystallography
Reported Structures
Lowest-energy structures reported for Si2Os, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Cmce (No. 64) | orthorhombic | 0.65 | 0.0000 | -24.009 | 9.65 |
| C2/m (No. 12) | monoclinic | 0.00 | 0.0735 | -23.936 | 9.63 |
| Pmmn (No. 59) | Orthorhombic | — | — | — | 6.10 |
| I4/mmm (No. 139) | Tetragonal | — | — | — | 7.59 |
| I4/mmm (No. 139) | Tetragonal | — | — | — | 9.56 |
| C2 (No. 5) | Monoclinic | — | — | — | 7.09 |
| P-1 (No. 2) | Triclinic | — | — | — | 6.18 |
| P-1 (No. 2) | Triclinic | — | — | — | 6.73 |
| P-1 (No. 2) | Triclinic | — | — | — | 10.24 |
| P-1 (No. 2) | Triclinic | — | — | — | 7.10 |
| P-1 (No. 2) | Triclinic | — | — | — | 8.34 |
| C2/m (No. 12) | Monoclinic | — | — | — | 10.68 |
Uses
Applications
Where Si2Os is used.
Materials science researchSemiconductor development studiesHigh-temperature component testing
Reference
Frequently Asked Questions
Common questions about Si2Os, answered from cross-validated data.
What is Si2Os?
Osmium disilicide is a metallic compound formed from osmium and silicon. It is primarily studied for its structural properties and potential utility in specialized electronic or high-temperature material applications.
More questions
What is Si2Os used for?
Si2Os is used in materials science research, semiconductor development studies, and high-temperature component testing.
What is the band gap of Si2Os?
Si2Os has a DFT-computed band gap of 0.65 eV across 104 reported structures.
Is Si2Os a metal, semiconductor, or insulator?
With a band gap up to 0.65 eV it is a semiconductor.
Is Si2Os thermodynamically stable?
Yes — Si2Os sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of Si2Os?
The lowest-energy reported polymorph of Si2Os is orthorhombic symmetry, space group Cmce (No. 64).
What is the density of Si2Os?
The computed density of the ground-state structure of Si2Os is 9.65 g/cm³.
How many polymorphs of Si2Os are known?
104 structures of Si2Os are reported across 3 databases, spanning 19 distinct space groups.
What elements does Si2Os contain?
Si2Os contains Os and Si (2 elements).
Where does the data for Si2Os come from?
Si2Os data is cross-referenced from materials_project, mpaloe, jarvis.
Explore
Related Compounds
Other Silicon Anode Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- mpaloe — Data from mpaloe.
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
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