Rb2Sn2O3
Rb2Sn2O3 is a stable semiconducting oxide material utilized in the study of transparent conducting electronics.
About Rb2Sn2O3
Rb2Sn2O3 is a complex oxide belonging to the class of transparent conducting oxides. As a thermodynamically stable material residing on the convex hull, it exhibits robust structural integrity and consistent phase formation across multiple reported crystallographic configurations.
This semiconducting compound is of significant interest for researchers investigating new transparent electronics. Its unique combination of rubidium, tin, and oxygen provides a distinct electronic environment that distinguishes it from more traditional binary oxide semiconductors.
Key Properties
Cross-validated computational properties for Rb2Sn2O3, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Rb2Sn2O3, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| R-3m (No. 166) | trigonal | 1.22 | 0.0000 | -5.267 | 4.65 |
| R-3m (No. 166) | — | — | — | — | — |
| R-3m (No. 166) | Trigonal | — | — | — | 4.63 |
| R-3m (No. 166) | Trigonal | — | — | — | 4.39 |
| R-3m (No. 166) | Trigonal | — | — | — | 4.54 |
Applications
Where Rb2Sn2O3 is used.
Frequently Asked Questions
Common questions about Rb2Sn2O3, answered from cross-validated data.
What is Rb2Sn2O3?
Rb2Sn2O3 is a stable semiconducting oxide material utilized in the study of transparent conducting electronics.
What is Rb2Sn2O3 used for?
What is the band gap of Rb2Sn2O3?
Is Rb2Sn2O3 a metal, semiconductor, or insulator?
Is Rb2Sn2O3 thermodynamically stable?
What is the crystal structure of Rb2Sn2O3?
What is the density of Rb2Sn2O3?
How many polymorphs of Rb2Sn2O3 are known?
What elements does Rb2Sn2O3 contain?
Where does the data for Rb2Sn2O3 come from?
How It Compares
Within the transparent conducting oxides class.
While many transparent conducting oxides like ZnO are widely utilized for their established electrical properties, Rb2Sn2O3 represents a more specialized member of the class. Unlike the common perovskite structure seen in BaSnO3, this compound offers a different structural framework that contributes to its specific semiconducting behavior, providing a unique alternative for materials design within the oxide semiconductor family.
Related Compounds
Other Transparent Conducting Oxides in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
- mpaloe — Data from mpaloe.
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