Rb2In4O7

Rb2In4O7 is a stable, semiconducting oxide material utilized in the study and development of transparent conducting electronics.

Crystal structure of Rb2In4O7 (trigonal, P-31m (No. 162))
Ground-state structure · Materials Project
Overview

About Rb2In4O7

Rb2In4O7 is a complex oxide composed of rubidium, indium, and oxygen. As a member of the transparent conducting oxide family, it exhibits semiconducting electronic properties that make it a subject of interest for optoelectronic research. Its position on the convex hull indicates that it is a thermodynamically stable phase, providing a robust structural foundation for material design.

The compound is characterized by its structural diversity, with multiple reported configurations across major databases. This stability and structural variety suggest significant potential for tuning its electronic properties, which is essential for developing next-generation transparent electrodes and semiconductor devices.

At a glance

Key Properties

Cross-validated computational properties for Rb2In4O7, aggregated across 3 databases.

Band Gap

1.66–1.81 eV
Range across DFT structures · ground state: wide gap

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

Stable
3 DFT sources

Structures

5
3 databases, 1 space group
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of Rb2In4O7. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.99 / 1.00
Trust tier: high

Hull Spread

0.003 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for Rb2In4O7, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
P-31m (No. 162)trigonal1.660.0000-1.699—
P-31m (No. 162)trigonal1.450.0000-5.5586.03
——1.810.0031-1.758—
P-31m (No. 162)trigonal———6.01
P-31m (No. 162)trigonal———6.18
P-31m (No. 162)trigonal———5.79
Uses

Applications

Where Rb2In4O7 is used.

Transparent electronicsOptoelectronic devicesSemiconductor research
Reference

Frequently Asked Questions

Common questions about Rb2In4O7, answered from cross-validated data.

What is Rb2In4O7?

Rb2In4O7 is a stable, semiconducting oxide material utilized in the study and development of transparent conducting electronics.

More questions
What is Rb2In4O7 used for?
Rb2In4O7 is used in transparent electronics, optoelectronic devices, and semiconductor research.
What is the band gap of Rb2In4O7?
Rb2In4O7 has a DFT-computed band gap of 1.66–1.81 eV across 5 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is Rb2In4O7 a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 1.81 eV (a semiconductor). Measured gaps are typically larger.
Is Rb2In4O7 thermodynamically stable?
Yes — Rb2In4O7 sits on the convex hull (energy above hull 0 eV/atom), i.e. stable.
What is the crystal structure of Rb2In4O7?
The reference structure of Rb2In4O7 is trigonal symmetry, space group P-31m (No. 162).
How many polymorphs of Rb2In4O7 are known?
5 structures of Rb2In4O7 are reported across 3 databases, spanning 1 distinct space group.
What elements does Rb2In4O7 contain?
Rb2In4O7 contains In, O, and Rb (3 elements).
Where does the data for Rb2In4O7 come from?
Rb2In4O7 data is cross-referenced from jarvis, materials_project, oqmd, mpaloe.
Comparison

How It Compares

Within the transparent conducting oxides class.

Within the diverse class of transparent conducting oxides, Rb2In4O7 offers a distinct structural alternative to more traditional binary oxides like ZnO or complex perovskites like BaSnO3. While materials such as ZnGa2O4 and CaIn2O4 are frequently studied for their specific wide-gap characteristics, Rb2In4O7 represents a unique chemical space that expands the library of stable indium-containing oxides available for specialized electronic applications.

Explore

Related Compounds

Other Transparent Conducting Oxides in the database.

Data sources & attribution
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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