In8O20Ti4

In8O20Ti4 is a semiconducting indium-titanium oxide that belongs to the transparent conducting oxide class and is considered a promising candidate for experimental synthesis.

Crystal structure of In8O20Ti4
Ground-state structure · Materials Project
Overview

About In8O20Ti4

In8O20Ti4 is a complex semiconducting oxide composed of indium, titanium, and oxygen. As a member of the transparent conducting oxide family, it represents a specialized material system designed to balance electrical conductivity with optical transparency. Its near-hull thermodynamic stability suggests it is a viable candidate for experimental synthesis and structural investigation. The compound is of interest to researchers exploring new semiconducting phases for next-generation electronics. By leveraging the unique electronic properties of indium and titanium, it offers a distinct pathway for tuning charge carrier behavior in thin-film architectures. Its structural diversity, evidenced by multiple reported configurations, highlights its flexibility as a functional material.

At a glance

Key Properties

Cross-validated computational properties for In8O20Ti4, aggregated across 3 databases.

Band Gap

1.97 eV
Range across DFT structures

Energy Above Hull

0.014 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
2 DFT sources

Structures

5
3 databases, 1 space group
Uses

Applications

Where In8O20Ti4 is used.

Transparent electronicsOptoelectronic devicesSemiconductor researchThin-film coatings
Reference

Frequently Asked Questions

Common questions about In8O20Ti4, answered from cross-validated data.

What is In8O20Ti4?

In8O20Ti4 is a semiconducting indium-titanium oxide that belongs to the transparent conducting oxide class and is considered a promising candidate for experimental synthesis.

More questions
What is In8O20Ti4 used for?
In8O20Ti4 is used in transparent electronics, optoelectronic devices, semiconductor research, and thin-film coatings.
What is the band gap of In8O20Ti4?
In8O20Ti4 has a DFT-computed band gap of 1.97 eV across 5 reported structures.
Is In8O20Ti4 a metal, semiconductor, or insulator?
With a band gap up to 1.97 eV it is a semiconductor.
Is In8O20Ti4 thermodynamically stable?
In8O20Ti4 has a lowest energy above hull of 0.014 eV/atom (near hull (likely stable)).
How many polymorphs of In8O20Ti4 are known?
5 structures of In8O20Ti4 are reported across 3 databases, spanning 1 distinct space group.
What elements does In8O20Ti4 contain?
In8O20Ti4 contains In, O, and Ti (3 elements).
Where does the data for In8O20Ti4 come from?
In8O20Ti4 data is cross-referenced from latticegraph.
Comparison

How It Compares

Within the transparent conducting oxides class.

Within the broad class of transparent conducting oxides, In8O20Ti4 occupies a distinct niche compared to simpler binary systems like ZnO or more common ternary oxides such as BaSnO3. While materials like ZnGa2O4 are frequently studied for their wide-gap insulating properties, In8O20Ti4 offers a different electronic profile that may be better suited for specific semiconducting applications where indium-based coordination environments are preferred over the zinc-centered frameworks common to many other class members.

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Related Compounds

Other Transparent Conducting Oxides in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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