In2O7Si2
In2O7Si2 is a semiconducting indium silicate oxide that holds potential for applications in transparent electronics due to its favorable thermodynamic stability.
About In2O7Si2
In2O7Si2 is an indium-based silicate oxide that functions as a semiconducting material. Its position as a near-hull stable compound suggests it is a viable target for experimental synthesis and structural investigation within the broader family of transparent conducting oxides.
This compound is of interest to researchers exploring new electronic materials that balance transparency with semiconducting properties. By leveraging the unique coordination environments provided by the indium and silicon framework, it contributes to the ongoing development of advanced thin-film technologies.
Key Properties
Cross-validated computational properties for In2O7Si2, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for In2O7Si2, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| C2/m (No. 12) | monoclinic | 2.70 | 0.0077 | -7.321 | 5.00 |
| Fd-3m (No. 227) | cubic | 1.81 | 0.1343 | -7.194 | 6.07 |
| C2/m (No. 12) | — | — | — | — | — |
| C2/m (No. 12) | — | — | — | — | — |
| — | — | — | — | — | 3.72 |
Applications
Where In2O7Si2 is used.
Frequently Asked Questions
Common questions about In2O7Si2, answered from cross-validated data.
What is In2O7Si2?
In2O7Si2 is a semiconducting indium silicate oxide that holds potential for applications in transparent electronics due to its favorable thermodynamic stability.
What is In2O7Si2 used for?
What is the band gap of In2O7Si2?
Is In2O7Si2 a metal, semiconductor, or insulator?
Is In2O7Si2 thermodynamically stable?
What is the crystal structure of In2O7Si2?
What is the density of In2O7Si2?
How many polymorphs of In2O7Si2 are known?
What elements does In2O7Si2 contain?
Where does the data for In2O7Si2 come from?
How It Compares
Within the transparent conducting oxides class.
Within the diverse class of transparent conducting oxides, In2O7Si2 occupies a distinct niche compared to more conventional materials like ZnO or BaSnO3. While many class members are widely utilized for their established conductivity, In2O7Si2 represents a more specialized structural arrangement that sits near the thermodynamic stability limit, offering a different pathway for property tuning than the more common spinel-structured oxides such as ZnGa2O4 or Zn2SiO4.
Related Compounds
Other Transparent Conducting Oxides in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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