I4Si
Silicon tetraiodide · Tetraiodosilane
Silicon tetraiodide is a chemical compound composed of silicon and iodine. It is primarily utilized as a precursor in chemical vapor deposition processes to deposit high-purity silicon layers in the electronics and semiconductor industries.
Key Properties
Cross-validated computational properties for Silicon tetraiodide, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for I4Si, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Pa-3 (No. 205) | cubic | 2.86 | 0.0000 | -2.985 | 3.85 |
| — | — | — | — | — | 3.16 |
| — | — | — | — | — | 3.16 |
| — | — | — | — | — | 3.16 |
| — | — | — | — | — | — |
| — | — | — | — | — | — |
| — | — | — | — | — | 5.01 |
Applications
Where Silicon tetraiodide is used.
Frequently Asked Questions
Common questions about Silicon tetraiodide, answered from cross-validated data.
What is I4Si?
Silicon tetraiodide is a chemical compound composed of silicon and iodine. It is primarily utilized as a precursor in chemical vapor deposition processes to deposit high-purity silicon layers in the electronics and semiconductor industries.
What is I4Si used for?
What is the band gap of I4Si?
Is I4Si a metal, semiconductor, or insulator?
Is I4Si thermodynamically stable?
What is the crystal structure of I4Si?
What is the density of I4Si?
How many polymorphs of I4Si are known?
What elements does I4Si contain?
Where does the data for I4Si come from?
Related Compounds
Other Silicon Anode Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- alexandria — Data from alexandria.
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