Ge2In2O7
Ge2In2O7 is a semiconducting oxide material with potential utility in transparent electronic and optoelectronic technologies.
About Ge2In2O7
Ge2In2O7 is a complex oxide belonging to the transparent conducting oxide family. Its electronic structure characterizes it as a semiconductor, positioning it as a functional material for devices requiring both optical transparency and electrical conductivity.
As a near-hull stable compound, it is considered a prime candidate for experimental synthesis. With multiple reported structures across research databases, it represents a significant, albeit specialized, entry in the study of indium-germanium-based oxides.
Key Properties
Cross-validated computational properties for Ge2In2O7, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ge2In2O7, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| C2/m (No. 12) | monoclinic | 1.80 | 0.0226 | -6.551 | 5.64 |
| Fd-3m (No. 227) | cubic | 1.05 | 0.0434 | -6.530 | 7.00 |
| — | — | — | — | — | 5.45 |
| C2/m (No. 12) | — | — | — | — | — |
| C2/m (No. 12) | — | — | — | — | — |
| C2/m (No. 12) | — | — | — | — | — |
Applications
Where Ge2In2O7 is used.
Frequently Asked Questions
Common questions about Ge2In2O7, answered from cross-validated data.
What is Ge2In2O7?
Ge2In2O7 is a semiconducting oxide material with potential utility in transparent electronic and optoelectronic technologies.
What is Ge2In2O7 used for?
What is the band gap of Ge2In2O7?
Is Ge2In2O7 a metal, semiconductor, or insulator?
Is Ge2In2O7 thermodynamically stable?
What is the crystal structure of Ge2In2O7?
What is the density of Ge2In2O7?
How many polymorphs of Ge2In2O7 are known?
What elements does Ge2In2O7 contain?
Where does the data for Ge2In2O7 come from?
How It Compares
Within the transparent conducting oxides class.
Within the broad class of transparent conducting oxides, Ge2In2O7 occupies a distinct niche compared to more common binary oxides like ZnO or complex perovskite-like structures such as LaGaO3. While materials like ZnGa2O4 and CaIn2O4 are frequently studied for their specific band characteristics, Ge2In2O7 offers a unique elemental combination that expands the compositional space available for tuning electronic properties in transparent electronics.
Related Compounds
Other Transparent Conducting Oxides in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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