GaHO
GaHO is a wide-band-gap oxide material that serves as an insulator and is considered a promising candidate for specialized electronic and optical applications.
About GaHO
GaHO is a wide-band-gap oxide that functions as an insulator, positioning it as an intriguing candidate within the broader family of transparent conducting oxides. Its electronic character suggests potential utility in specialized optoelectronic components where wide-gap materials are essential for transparency and dielectric performance.
As a near-hull material, GaHO is considered thermodynamically accessible for synthesis. With multiple reported structures across databases, it represents a significant subject for ongoing materials research into how gallium-based oxides can be tuned for advanced electronic device integration.
Key Properties
Cross-validated computational properties for GaHO, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for GaHO, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| R-3 (No. 148) | trigonal | 3.92 | 0.0130 | -5.629 | 6.53 |
| P1 (No. 1) | Triclinic | — | — | — | 3.97 |
| C2/m (No. 12) | Monoclinic | — | — | — | 5.10 |
| C2/m (No. 12) | Monoclinic | — | — | — | 5.05 |
| — | — | — | — | — | — |
Applications
Where GaHO is used.
Frequently Asked Questions
Common questions about GaHO, answered from cross-validated data.
What is GaHO?
GaHO is a wide-band-gap oxide material that serves as an insulator and is considered a promising candidate for specialized electronic and optical applications.
What is GaHO used for?
What is the band gap of GaHO?
Is GaHO a metal, semiconductor, or insulator?
Is GaHO thermodynamically stable?
What is the crystal structure of GaHO?
What is the density of GaHO?
How many polymorphs of GaHO are known?
What elements does GaHO contain?
Where does the data for GaHO come from?
How It Compares
Within the transparent conducting oxides class.
Within the diverse class of transparent conducting oxides, GaHO occupies a unique niche compared to established materials like ZnO or BaSnO3. While ZnO is widely utilized for its conductive properties, GaHO acts as a wide-gap insulator, distinguishing it from the more metallic or semiconducting members of the group like ZnGa2O4 or CaIn2O4.
Related Compounds
Other Transparent Conducting Oxides in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- mpaloe — Data from mpaloe.
- alexandria — Data from alexandria.
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