GaAsO4
GaAsO4 is a thermodynamically stable, wide-gap insulating oxide composed of gallium, arsenic, and oxygen.
About GaAsO4
GaAsO4 is a thermodynamically stable inorganic compound composed of gallium, arsenic, and oxygen. As a member of the oxide family, it exhibits a wide-gap insulating electronic character, which distinguishes it from more conductive materials in its class. Its structural robustness is evidenced by multiple reported crystal configurations across various databases. This stability makes it a subject of interest for fundamental materials research where precise control over electronic properties is required. While it lacks the high conductivity of some metallic oxides, its insulating nature is critical for applications requiring dielectric performance and structural integrity in electronic environments.
Key Properties
Cross-validated computational properties for GaAsO4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of GaAsO4. Tight agreement means computed properties can be trusted without re-running calculations.
Agreement ScoreA normalized confidence score summarizing how closely independent DFT databases agree. Higher scores mean tighter cross-source agreement.
Hull SpreadDifference between the highest and lowest energy-above-hull values reported by comparable sources. Smaller spread means less thermodynamic disagreement.
Sources ComparedNumber and names of computational sources with comparable entries for this formula.
Space Group ConsensusWhether independent sources predict the same crystal symmetry for the lowest-energy structure.
Reported Structures
Lowest-energy structures reported for GaAsO4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| — | — | 3.59 | 0.0000 | -1.749 | — |
| P3121 (No. 152) | trigonal | 3.20 | 0.0000 | -1.527 | — |
| P3121 (No. 152) | trigonal | 3.20 | 0.0000 | -1.527 | — |
| P3121 (No. 152) | trigonal | 3.20 | 0.0000 | -1.527 | — |
| P3121 (No. 152) | trigonal | 3.20 | 0.0000 | -1.527 | — |
| P3121 (No. 152) | trigonal | 3.20 | 0.0000 | -1.527 | — |
| P3121 (No. 152) | trigonal | 3.08 | 0.0000 | -6.521 | 4.21 |
| — | — | 3.37 | 0.0046 | -1.744 | — |
| C2221 (No. 20) | orthorhombic | 3.01 | 0.0052 | -1.522 | — |
| C2221 (No. 20) | orthorhombic | 3.08 | 0.0125 | -6.508 | 3.92 |
| I-4 (No. 82) | tetragonal | 3.35 | 0.0174 | -1.509 | — |
| — | — | 1.91 | 0.0472 | -1.702 | — |
Applications
Where GaAsO4 is used.
Frequently Asked Questions
Common questions about GaAsO4, answered from cross-validated data.
What is GaAsO4?
GaAsO4 is a thermodynamically stable, wide-gap insulating oxide composed of gallium, arsenic, and oxygen.
What is GaAsO4 used for?
What is the band gap of GaAsO4?
Is GaAsO4 a metal, semiconductor, or insulator?
Is GaAsO4 thermodynamically stable?
What is the crystal structure of GaAsO4?
How many polymorphs of GaAsO4 are known?
What elements does GaAsO4 contain?
Where does the data for GaAsO4 come from?
How It Compares
Within the transparent conducting oxides class.
Within the diverse family of transparent conducting oxides, GaAsO4 stands out for its insulating character compared to more conductive counterparts like BaSnO3. While materials such as ZnGa2O4 are frequently investigated for their optoelectronic potential, GaAsO4 occupies a niche as a stable, wide-gap dielectric that provides a different electronic profile than the typical semi-conducting members of this group.
Related Compounds
Other Transparent Conducting Oxides in the database.
Data sources & attribution
- oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
- jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
- materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
- mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.
- cod — Data from the Crystallography Open Database (crystallography.net/cod/). Cite: Grazulis et al., J. Appl. Cryst. 42, 726 (2009). (CC0-1.0)
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