Ga4B2O9
Ga4B2O9 is a wide-band-gap insulating oxide that is considered thermodynamically stable and a subject of interest for specialized optical and electronic applications.

About Ga4B2O9
Ga4B2O9 is a complex borate-oxide material characterized by its wide-band-gap insulating electronic structure. Its proximity to the thermodynamic hull suggests it is a viable candidate for synthesis and further experimental investigation in materials science laboratories.
As a member of the broader transparent conducting oxide family, this compound is studied for its potential role in advanced optical and electronic applications. Its unique structural arrangement of gallium, boron, and oxygen provides a distinct framework that differentiates it from more common binary oxides.
Key Properties
Cross-validated computational properties for Ga4B2O9, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ga4B2O9, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Cm (No. 8) | monoclinic | 2.65 | 0.0043 | -7.108 | 4.34 |
| C2/m (No. 12) | monoclinic | 3.22 | 0.0409 | -7.071 | 3.97 |
| C2/m (No. 12) | — | — | — | — | — |
| C2/m (No. 12) | Monoclinic | — | — | — | 3.97 |
| C2/m (No. 12) | Monoclinic | — | — | — | 4.07 |
| C2/m (No. 12) | Monoclinic | — | — | — | 4.18 |
Applications
Where Ga4B2O9 is used.
Frequently Asked Questions
Common questions about Ga4B2O9, answered from cross-validated data.
What is Ga4B2O9?
Ga4B2O9 is a wide-band-gap insulating oxide that is considered thermodynamically stable and a subject of interest for specialized optical and electronic applications.
What is Ga4B2O9 used for?
What is the band gap of Ga4B2O9?
Is Ga4B2O9 a metal, semiconductor, or insulator?
Is Ga4B2O9 thermodynamically stable?
What is the crystal structure of Ga4B2O9?
What is the density of Ga4B2O9?
How many polymorphs of Ga4B2O9 are known?
What elements does Ga4B2O9 contain?
Where does the data for Ga4B2O9 come from?
How It Compares
Within the transparent conducting oxides class.
While many members of this class, such as ZnO or BaSnO3, are widely utilized for their conductive properties, Ga4B2O9 occupies a more niche position as a wide-gap insulator. Unlike the spinel-structured ZnGa2O4, which is frequently explored for its luminescence and transparent conductivity, Ga4B2O9 serves as a structural alternative that highlights the diverse electronic potential within gallium-based oxide systems.
Related Compounds
Other Transparent Conducting Oxides in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
- mpaloe — Data from mpaloe.
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