Ga4B2O9

Ga4B2O9 is a wide-band-gap insulating oxide that is considered thermodynamically stable and a subject of interest for specialized optical and electronic applications.

Crystal structure of Ga4B2O9 (monoclinic, Cm (No. 8))
Ground-state structure · Materials Project
Overview

About Ga4B2O9

Ga4B2O9 is a complex borate-oxide material characterized by its wide-band-gap insulating electronic structure. Its proximity to the thermodynamic hull suggests it is a viable candidate for synthesis and further experimental investigation in materials science laboratories.

As a member of the broader transparent conducting oxide family, this compound is studied for its potential role in advanced optical and electronic applications. Its unique structural arrangement of gallium, boron, and oxygen provides a distinct framework that differentiates it from more common binary oxides.

At a glance

Key Properties

Cross-validated computational properties for Ga4B2O9, aggregated across 3 databases.

Band Gap

2.65–3.22 eV
Range across DFT structures

Energy Above Hull

0.004 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
2 DFT sources

Structures

6
3 databases, 2 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for Ga4B2O9, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Cm (No. 8)monoclinic2.650.0043-7.1084.34
C2/m (No. 12)monoclinic3.220.0409-7.0713.97
C2/m (No. 12)
C2/m (No. 12)Monoclinic3.97
C2/m (No. 12)Monoclinic4.07
C2/m (No. 12)Monoclinic4.18
Uses

Applications

Where Ga4B2O9 is used.

Optical coatingsInsulating substratesAdvanced dielectric materials
Reference

Frequently Asked Questions

Common questions about Ga4B2O9, answered from cross-validated data.

What is Ga4B2O9?

Ga4B2O9 is a wide-band-gap insulating oxide that is considered thermodynamically stable and a subject of interest for specialized optical and electronic applications.

More questions
What is Ga4B2O9 used for?
Ga4B2O9 is used in optical coatings, insulating substrates, and advanced dielectric materials.
What is the band gap of Ga4B2O9?
Ga4B2O9 has a DFT-computed band gap of 2.65–3.22 eV across 6 reported structures.
Is Ga4B2O9 a metal, semiconductor, or insulator?
With a wide band gap up to 3.22 eV it is an insulator / wide-band-gap material.
Is Ga4B2O9 thermodynamically stable?
Ga4B2O9 has a lowest energy above hull of 0.004 eV/atom (near hull (likely stable)).
What is the crystal structure of Ga4B2O9?
The lowest-energy reported polymorph of Ga4B2O9 is monoclinic symmetry, space group Cm (No. 8).
What is the density of Ga4B2O9?
The computed density of the ground-state structure of Ga4B2O9 is 4.34 g/cm³.
How many polymorphs of Ga4B2O9 are known?
6 structures of Ga4B2O9 are reported across 3 databases, spanning 2 distinct space groups.
What elements does Ga4B2O9 contain?
Ga4B2O9 contains B, Ga, and O (3 elements).
Where does the data for Ga4B2O9 come from?
Ga4B2O9 data is cross-referenced from materials_project, jarvis, mpaloe.
Comparison

How It Compares

Within the transparent conducting oxides class.

While many members of this class, such as ZnO or BaSnO3, are widely utilized for their conductive properties, Ga4B2O9 occupies a more niche position as a wide-gap insulator. Unlike the spinel-structured ZnGa2O4, which is frequently explored for its luminescence and transparent conductivity, Ga4B2O9 serves as a structural alternative that highlights the diverse electronic potential within gallium-based oxide systems.

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Related Compounds

Other Transparent Conducting Oxides in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
  • mpaloe — Data from mpaloe.

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