Ga2O11Te4
Ga2O11Te4 is a complex, wide-band-gap oxide material that is potentially synthesizable and serves as an insulating component in advanced material research.
About Ga2O11Te4
Ga2O11Te4 is a complex oxide material that functions as a wide-band-gap insulator. Its unique structural arrangement of gallium, oxygen, and tellurium atoms positions it as an intriguing candidate for specialized optoelectronic applications where transparency and insulating properties are required.
As a near-hull compound, it is considered a promising target for experimental synthesis. Its existence within multiple structural databases underscores its significance as a stable, well-defined inorganic phase that warrants further investigation for advanced material design.
Key Properties
Cross-validated computational properties for Ga2O11Te4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ga2O11Te4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P1 (No. 1) | triclinic | 3.51 | 0.0081 | -6.012 | 5.48 |
| P1 (No. 1) | — | — | — | — | — |
| — | — | — | — | — | 5.14 |
Applications
Where Ga2O11Te4 is used.
Frequently Asked Questions
Common questions about Ga2O11Te4, answered from cross-validated data.
What is Ga2O11Te4?
Ga2O11Te4 is a complex, wide-band-gap oxide material that is potentially synthesizable and serves as an insulating component in advanced material research.
What is Ga2O11Te4 used for?
What is the band gap of Ga2O11Te4?
Is Ga2O11Te4 a metal, semiconductor, or insulator?
Is Ga2O11Te4 thermodynamically stable?
What is the crystal structure of Ga2O11Te4?
What is the density of Ga2O11Te4?
How many polymorphs of Ga2O11Te4 are known?
What elements does Ga2O11Te4 contain?
Where does the data for Ga2O11Te4 come from?
How It Compares
Within the transparent conducting oxides class.
While many transparent conducting oxides like ZnO or BaSnO3 are engineered for high electrical conductivity, Ga2O11Te4 distinguishes itself as a wide-gap insulator. Unlike the common spinel structures found in ZnGa2O4 or ZnCr2O4, this compound exhibits a distinct stoichiometry that broadens the structural diversity of the gallium-based oxide family.
Related Compounds
Other Transparent Conducting Oxides in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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