CeSnO4
CeSnO4 is a semiconducting oxide composed of cerium, tin, and oxygen that is currently being studied for its potential role in electronic and optoelectronic applications.
About CeSnO4
CeSnO4 is a complex oxide containing cerium, tin, and oxygen that functions as a semiconducting material. Within the broader category of transparent conducting oxides, it represents an interesting, albeit structurally complex, candidate for research into advanced electronic components.
Because this compound sits above the thermodynamic hull, it is considered metastable, which presents unique challenges and opportunities for synthesis. Its electronic character makes it a subject of interest for those investigating the intersection of rare-earth chemistry and conductive oxide performance.
Key Properties
Cross-validated computational properties for CeSnO4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for CeSnO4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| R-3m (No. 166) | trigonal | 1.69 | 0.1885 | -7.785 | 7.08 |
| R-3m (No. 166) | Trigonal | — | — | — | 7.08 |
| R-3m (No. 166) | Trigonal | — | — | — | 7.58 |
| R-3m (No. 166) | Trigonal | — | — | — | 7.31 |
| R-3m (No. 166) | — | — | — | — | — |
Applications
Where CeSnO4 is used.
Frequently Asked Questions
Common questions about CeSnO4, answered from cross-validated data.
What is CeSnO4?
CeSnO4 is a semiconducting oxide composed of cerium, tin, and oxygen that is currently being studied for its potential role in electronic and optoelectronic applications.
What is CeSnO4 used for?
What is the band gap of CeSnO4?
Is CeSnO4 a metal, semiconductor, or insulator?
Is CeSnO4 thermodynamically stable?
What is the crystal structure of CeSnO4?
What is the density of CeSnO4?
How many polymorphs of CeSnO4 are known?
What elements does CeSnO4 contain?
Where does the data for CeSnO4 come from?
How It Compares
Within the transparent conducting oxides class.
Unlike the highly stable and widely utilized BaSnO3, which is a cornerstone of the transparent conducting oxide family, CeSnO4 is a less conventional member that faces greater challenges regarding its thermodynamic stability. While materials like ZnO are standard benchmarks for conductivity, CeSnO4 serves as a specialized, data-rich subject for exploring how cerium integration influences the electronic behavior of tin-based oxides.
Related Compounds
Other Transparent Conducting Oxides in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- mpaloe — Data from mpaloe.
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
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