C4Si4

C4Si4 has a DFT band gap of 1.33–3.58 eV across 52 reported structures in 9 space groups. Cross-validated across 4 computational databases.

At a glance

Key Properties

Cross-validated computational properties for C4Si4, aggregated across 4 databases.

Band Gap

1.33–3.58 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

52
4 databases, 9 space groups
Reference

Frequently Asked Questions

Common questions about C4Si4, answered from cross-validated data.

What is the band gap of C4Si4?

C4Si4 has a DFT-computed band gap of 1.33–3.58 eV across 52 reported structures.

More questions
Is C4Si4 a metal, semiconductor, or insulator?
With a wide band gap up to 3.58 eV it is an insulator / wide-band-gap material.
Is C4Si4 thermodynamically stable?
Yes — C4Si4 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of C4Si4 are known?
52 structures of C4Si4 are reported across 4 databases, spanning 9 distinct space groups.
What elements does C4Si4 contain?
C4Si4 contains C and Si (2 elements).
Where does the data for C4Si4 come from?
C4Si4 data is cross-referenced from latticegraph.
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Related Compounds

Other Silicon Anode Materials in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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