Bi8Se12

Bi8Se12 has a DFT band gap of 0.38–0.96 eV across 9 reported structures in 5 space groups. Cross-validated across 4 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Bi8Se12, aggregated across 4 databases.

Band Gap

0.38–0.96 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

9
4 databases, 5 space groups
Reference

Frequently Asked Questions

Common questions about Bi8Se12, answered from cross-validated data.

What is the band gap of Bi8Se12?

Bi8Se12 has a DFT-computed band gap of 0.38–0.96 eV across 9 reported structures.

More questions
Is Bi8Se12 a metal, semiconductor, or insulator?
With a band gap up to 0.96 eV it is a semiconductor.
Is Bi8Se12 thermodynamically stable?
Yes — Bi8Se12 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of Bi8Se12 are known?
9 structures of Bi8Se12 are reported across 4 databases, spanning 5 distinct space groups.
What elements does Bi8Se12 contain?
Bi8Se12 contains Bi and Se (2 elements).
Where does the data for Bi8Se12 come from?
Bi8Se12 data is cross-referenced from latticegraph.
Explore

Related Compounds

Other Bismuth Chalcogenide Thermoelectrics in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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