Bi4Se8

Bi4Se8 has a DFT band gap of 0.67 eV across 6 reported structures in 3 space groups. Cross-validated across 4 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Bi4Se8, aggregated across 4 databases.

Band Gap

0.67 eV
Range across DFT structures

Energy Above Hull

0.021 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
2 DFT sources

Structures

6
4 databases, 3 space groups
Reference

Frequently Asked Questions

Common questions about Bi4Se8, answered from cross-validated data.

What is the band gap of Bi4Se8?

Bi4Se8 has a DFT-computed band gap of 0.67 eV across 6 reported structures.

More questions
Is Bi4Se8 a metal, semiconductor, or insulator?
With a band gap up to 0.67 eV it is a semiconductor.
Is Bi4Se8 thermodynamically stable?
Bi4Se8 has a lowest energy above hull of 0.021 eV/atom (near hull (likely stable)).
How many polymorphs of Bi4Se8 are known?
6 structures of Bi4Se8 are reported across 4 databases, spanning 3 distinct space groups.
What elements does Bi4Se8 contain?
Bi4Se8 contains Bi and Se (2 elements).
Where does the data for Bi4Se8 come from?
Bi4Se8 data is cross-referenced from latticegraph.
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Related Compounds

Other Bismuth Chalcogenide Thermoelectrics in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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