Ba4In4O10

Ba4In4O10 has a DFT band gap of 1.06 eV across 1 reported structure in 1 space group; its reference structure is orthorhombic (Ima2 (No. 46)). Cross-validated across 1 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Ba4In4O10, aggregated across 1 database.

Band Gap

1.06 eV
Range across DFT structures · ground state: narrow gap

Energy Above Hull

—
Best (lowest) across sources

Stability

Stable
2 DFT sources

Structures

1
1 database, 1 space group
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of Ba4In4O10. Tight agreement means computed properties can be trusted without re-running calculations.

Only 1 independent DFT source (materials_project) reports a hull energy for Ba4In4O10, so cross-source agreement can't be assessed yet.

Crystallography

Reported Structures

Lowest-energy structures reported for Ba4In4O10, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Ima2 (No. 46)orthorhombic0.910.0000-6.2116.26
C2/c (No. 15)monoclinic0.700.0407-6.1706.26
Pmm2 (No. 25)orthorhombic0.480.0582-6.1536.17
Aem2 (No. 39)orthorhombic0.410.0742-6.1376.24
P1 (No. 1)triclinic0.000.1513-6.0606.07
I4/mmm (No. 139)tetragonal0.000.1518-6.0596.06
Ima2 (No. 46)orthorhombic1.06—-5.8406.14
Ima2 (No. 46)orthorhombic———6.35
Imma (No. 74)orthorhombic———6.38
Ima2 (No. 46)orthorhombic———6.41
P4/mmm (No. 123)tetragonal———6.19
Synthesis

Synthesis Routes

Literature-extracted synthesis procedures targeting Ba4In4O10.

Sol Gel
Procedure available · ceder_sol_gel
Sol Gel
Procedure available · ceder_sol_gel
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Reference

Frequently Asked Questions

Common questions about Ba4In4O10, answered from cross-validated data.

What is the band gap of Ba4In4O10?

Ba4In4O10 has a DFT-computed band gap of 1.06 eV. Standard DFT underestimates band gaps, so the measured gap is typically larger.

More questions
Is Ba4In4O10 a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 1.06 eV (a semiconductor). Measured gaps are typically larger.
What is the crystal structure of Ba4In4O10?
The reference structure of Ba4In4O10 is orthorhombic symmetry, space group Ima2 (No. 46).
What is the density of Ba4In4O10?
The computed density of the ground-state structure of Ba4In4O10 is 6.26 g/cm³.
How is Ba4In4O10 synthesized?
Literature-reported routes for Ba4In4O10 include sol gel, solid state (10 procedures documented).
What elements does Ba4In4O10 contain?
Ba4In4O10 contains Ba, In, and O (3 elements).
Where does the data for Ba4In4O10 come from?
Ba4In4O10 data is cross-referenced from materials_project, aflow, cod.
Explore

Related Compounds

Other Transparent Conducting Oxides in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • aflow — Data from AFLOW (aflow.org). Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012). (CC-BY-4.0)
  • cod — Data from the Crystallography Open Database (crystallography.net/cod/). Cite: Grazulis et al., J. Appl. Cryst. 42, 726 (2009). (CC0-1.0)

Analyze Ba4In4O10 in the Lattice Graph platform

Polymorph comparison, confidence scoring, supply-chain risk, and patent monitoring — across 85 source databases.

Explore the Platform →
Results are informational and should be validated by qualified professionals. See Terms of Service